学术骨干 
 教师队伍 
周文政
2015-11-08 13:24  

周文政

周文政19752月生,男,四川达县人,博士,研究员,硕士生导师,广西自然科学基金杰出青年基金获得者。广西物理学会秘书长,全国高等学校电磁学研究会常务理事,《Chinese Physics B》、《ChinesePhysics Letters》、《物理学报》、《红外与毫米波学报》审稿人,广西大学物理科学与工程技术学院副院长。近年来一直从事材料物理、半导体材料、半导体物理、微电子光电子材料与器件、新能源材料及器件、光电探测技术领域的的研究工作。

通讯地址:广西南宁市大学东路100号广西大学物理科学与工程技术学院

 

E-mailwzzhou@gxu.edu.cn

 

主讲课程

本科生:力学、理论力学。

研究生:金属基复合材料、专业英语

 

研究方向

1)、氢能材料

2)、AlxGa1-xN/GaN二维电子气的磁输运及自旋特性

3)、InxGa1-xAs/InyAl1-yAs二维电子气的磁输运及自旋特性

4)、有机/无机光电材料的制备及性能

 

研究生培养

在读硕士:王旭坡、蔡超群、魏冰、温张凡

已毕业硕士:王威、韦尚江、李小娟、常志刚、肖萌

 

主持科研项目

1)、III-V族半导体异质结构二维电子气的自旋输运特性,国家自然科学基金,批准号:61264006,起止时间:2013.1-2016.12

2)、窄禁带半导体二维电子的自旋输运量子调控,广西自然科学基金杰出青年基金批准号:2013GXNSFGA019007,起止时间:2013.4-2016.3  

3)、AlGaN/GaN异质结二维电子气的零场自旋分裂,国家自然科学基金,批准号:60906045,起止时间:2010.1-2012.12

4)、III-V族窄禁带半导体二维电子气的自旋输运特性,中国博士后科学基金,批准号:20070420634,起止时间:2007.12-2009.7

 

论文、专著及专利

1.     W.Z. Zhou, T. Lin, L.Y. Shang, G. Yu, K. H. Gao, Y. M. Zhou, L. M. Wei,L.J. Cui,Y. P. Zeng,S. L. Guo, and J. H. Chu, “Anomalousshift of the beating nodes in illumination-controlled In1-xGaxAs/In1-yAlyAstwo-dimensional electron gases with strong spin-orbit interaction”.Phys.Rev. B81(19), 195312 (2010).

2.     W. Z. Zhou, T. Lin, L. Y. Shang, L. Sun, K. H. Gao, Y. M. Zhou, G.Yu,N. Tang, K. Han, B. Shen,S. L. Guo, Y. S. Gui, and J. H. Chu, “Influenceof the illumination on weak antilocalization in an AlxGa1-xN/GaNheterostructure with strong spin-orbit coupling”.Appl. Phys.Lett.93(26), 262104 (2008).

3.     W.Z. Zhou, T. Lin, L.Y. Shang, L. Sun, K. H. Gao, Y. M. Zhou, G. Yu,N. Tang,K. Han, B. Shen,S. L. Guo, Y. S. Gui,and J. H. Chu, “Weak antilocalizationand beating pattern in high electron mobility AlxGa1-xN/GaNtwo-dimensional electron gas with strong Rashba spin-orbit coupling”.J. Appl. Phys.104(5), 053703 (2008).

4.     W.Z. Zhou, W. Wang, Z.G. Chang, Y. Z. Wang, Z. Q. Lan, L. Y. Shang, T. Lin, L. J. Cui, Y. P. Zeng, G.X. Li, C. H. Yu, J. Guo, J. H. Chu, “Effects ofscattering on two-dimensional electron gases in InGaAs/InAlAs quantum wells”,J. Appl. Phys.112(2), 023713 (2012).

5.     W.Z. Zhou, T. Lin, L.Y. Shang, G. Yu, K. Han, J. X. Duan, N. Tang, B. Shen, J. H. ChuDiffusion andballistic contributions of electron-electron interaction to the conductivity inan Al0.26Ga0.74N/AlN/GaN heterostructure”,Solid State Commun., 151(12),879-882 (2011).

6.     W. Z. Zhou,Z. M. Huang, Z. J. Qiu, T. Lin, L. Y. Shang, D. L. Li , H. L. Gao, L. J. Cui,Y. P. Zeng, S. L. Guo, Y. S. Gui, N. Dai, and J. H. Chu, “Pseudospin in Siδ-doped InAlAs/InGaAs/InAlAs Single Quantum Well”,Solid State Commun., 142(7), 393-397 (2007).

7.     W. Z. Zhou,T. Lin, L. Y. Shang, Z. M. Huang, G. Yu, S. L. Guo, Y. S. Gui, N. Dai, J. H.Chu, L. J. Cui, D. L. Li , H. L. Gao, and Y. P. Zeng, “Weak antilocalizationand Beating pattern in an InGaAs/InAlAs quantum well”Solid State Commun., 143(6-7), 300-303 (2007).

8.     周文政,林铁,商丽燕,黄志明,朱博,崔利杰,高宏玲,李东临,郭少令,桂永胜,     褚   君浩δ掺杂In0.65Ga0.35As/In0.52Al0.48As赝型高迁移率晶体管材料子带电子特性研究物理学报56(7),4143-4147 (2007).

9.     周文政,林铁,商丽燕,黄志明,崔利杰,李东临,高宏玲,曾一平,郭少令,桂永胜,     褚   君浩“InAlAs/InGaAs/InAlAs量子阱高迁移率二维电子气系统中的反弱局域效应研究物理学报56(7),4099-4104 (2007).

10.周文政,姚炜,朱博,仇志军,郭少令,林铁,崔利杰,桂永胜,     褚   君浩单边掺杂InAlAs/InGaAs单量子阱中二维电子气的磁输运特性物理学报55(4)2044-2048,(2006).

11.王威,周文政,韦尚江,李小娟,常志刚,林铁,商丽燕,韩奎,段俊熙,唐宁沈波,褚君浩“GaN/AlxGa1-xN异质结二维电子气的磁电阻研究物理学报61(23)237302,(2012).(通讯作者)

12.李小娟,韦尚江,吕文辉,吴丹,李亚军,周文政一种新方法制备硅/聚(3,4乙撑二氧噻吩)核/壳纳米线阵列杂化太阳能电池物理学报62(10)108801,(2013).(通讯作者)

13.周文政,代娴,林铁徐庆庆,     褚   君浩,As掺杂碲镉汞多载流子体系电学特性研究广西大学学报.自然科学版35( 5), 821-826(2010).

14.周文政,代娴,林铁商丽燕崔利杰,曾一平,   褚   君浩,“In0.53Ga0.47As/In0.52Al0.48As量子阱二维电子气的零场自旋分裂广西大学学报.自然科学版35( 6),1027-1031(2010).

15.周文政欧阳义芳覃善华钟夏平吴伟明,“Al1-xFex混合粉末的机械化合金化广西大学学报(自然科学版),29(2), 101-104 (2004).

16.K.H. GaoW. Z. Zhou,Y. M. Zhou, Guolin Yu, T. Lin, S. L. Guo, J. H. Chu, N. Dai, Y. Gu, Y. G.Zhang, and D. G. Austing, “Magnetoresistance in high-density two-dimensionalelectron gas confined in InAlAs/InGaAs quantum well”,Appl. Phys. Lett.94(15), 152107 (2009).

17.LeiSun,Wenzheng Zhou, GuolinYu, Liyan Shang, Kuanghong Gao, Yuanming Zhou, Tie Lin, Lijie Cui, Yiping Zeng,Junhao Chu, “Strong Spin-orbit Interactions in an InAlAs/InGaAs/InAlAsTwo-dimensional Electron Gas by Weak AntilocalizationAnalysis”,J.J. Appl. Phys.48(6), 063004 (2009).

18.OuyangYifang,Zhou Wenzheng, ZhongXiaping, and Qin Shanhua, “Mechanical alloying of Fe25Al75-xTixmixed powders”;Mater. Trans.,45(5), 1774-1777 (2004).

19.覃善华,周文政,欧阳义芳,钟夏平,吴伟明,“纳米Al2O3-Mg(三氧化二铝镁)和Al2O3-MgO(三氧化二铝氧化镁)混合粉末的制备”,电子元件与材料23(2),4-6 (2004).

20.钟夏平,周文政,欧阳义芳,吴伟明,“机械合金化制备Al5Fe2金属间化合物中国科学学报1(6),3-6 (2004).

21.L. Y. Shang, T. Lin,W. Z. Zhou, L. M. Wei, Y. F. Wei, Y. H. Sun, S. L. Guo, P.X. Yang,and J. H. Chu, “Spin-related magnetoresistance oscillations in theinversion layer on bulkp-Hg1-xCdxTe”,J. Appl. Phys.109(11), 113717 (2011).

22.T. Lin, L.Y. Shang,W.Z. Zhou, X. J. Meng, J. L. Sun, G. Yu, S. L. Guo, J. H. Chu, “Competingconduction mechanisms of two-dimensional electrons and bulk-like electrons inthe n-type surface of the naturally oxidized p-type HgCdTe thin film”,Appl.Phys. A,106(3), 703-707 (2012).

23.商丽燕,林铁,周文政,黄志明,李东临,高宏玲,崔利杰,曾一平,郭少令,     褚   君浩,In0.53Ga0.47As/In0.52Al0.48As量子阱中双子带占据的二维电子气的输运特性物理学报57(4),2481-2485 (2008).

24.商丽燕,林铁,周文政,郭少令,李东临,高宏玲,崔利杰,曾一平,     褚   君浩,两个子带占据的In0.53Ga0.47As/In0.52Al0.48As量子阱中填充因子的变化规律物理学报57(6),3818-3822 (2008).

25.商丽燕,林铁,周文政,李东临,高宏玲,曾一平,郭少令,俞国林,     褚   君浩,In0.53Ga0.47As/In0.52Al0.48As量子阱中的正磁电阻效应物理学报57(8),5232-5236 (2008).

26.高宏玲,李东临,周文政,商丽燕,王宝强,朱战平,曾一平,“不同量子阱宽度的InPIn0.53GaAs/In0.52AlAs高电子迁移率晶体管材料二维电子气的性能研究”,物理学报56(8),4955-4959 (2007).

27.朱博,桂永胜,周文政商丽燕,郭少令, 君浩,吕捷,唐宁,沈波,张福甲“Al0.22Ga0.78N/GaN二维电子气中的弱局域和反弱局域效应物理学报55(5),2498-2503(2006).

28.朱博,桂永胜,周文政,商丽燕,仇志军,郭少令,张福甲,褚君浩,窄禁带稀磁半导体二维电子气的磁阻振荡研究物理学报55(6),2955-2960 (2006).

29.余晨辉,罗向东,周文政,罗庆洲,刘培生,新型双异质结高电子迁移率晶体管的电流崩塌效应研究物理学报61(20), 207301 (2012).

30.K.H. Gao, Guolin Yu, Y. M. Zhou,W. Z.Zhou, T. Lin, J. H. Chu, N. Dai, D. G. Austing, Y. Gu, and Y. G. Zhang,“Experimental study of weak antilocalization effects in a two-dimensionalsystem: Anomalous dephasing rate”,Phys.Rev. B79(8), 085310 (2009).

31.Y. W. Li, Z. G. Hu, F. Y. Yue,W. Z. Zhou, P. X. Yang and J. H. Chu,“Effects of deposition temperature and post-annealing on structure andelectrical properties in (La0.5Sr0.5)CoO3films grown on silicon substrate”,Appl. Phys. A,95(3), 721-725 (2009).

32.K.H. Gao, G. Yu, Y. M. Zhou,W. Z. Zhou,T. Lin, J. H. Chu, N. Dai, A. J. SpringThorpe, and D. G. Austing “Transportproperties of AlGaAs/GaAs parabolic quantum wells”J. Appl. Phys.105(1),013712 (2009).

33.L. M. Wei, K. H. Gao, X. Z. Liu,W. Z. Zhou, L. J. Cui, Y. P. Zeng, G. Yu, R. Yang, T. Lin,L. Y. Shang, S. L. Guo, N. Dai, J. H. Chu, and D. G. Austing, “Spin dependenceof electron effective masses in InGaAs/InAlAs quantum well”,J. Appl. Phys.110(6),063707(2011).

34.Y. M. Zhou, K. H. Gao, G. Yu,W. Z. Zhou, T. Lin, S. L. Guo,J. H. Chu, and N. Dai, “Gate-controlledelectron_electron interactions in an In0.53Ga0.47As/InPquantum well structure”,SolidState Commun., 150(5-6), 251-253 (2010).

35.朱博,桂永胜,仇志军,周文政,姚炜,郭少令, 君浩,张福甲窄禁带稀磁半导体二维电子气的拍频振荡物理学报55(2), 786-790 (2006).

36.SHANG Li-Yan, YU Guo-Lin, LIN Tie,ZHOU Wen-Zheng, GUO Shao-Ling, DAI Ning,     CHU Jun-Hao   , “Spin Splitting in In0.53Ga0.47As/InP Heterostructures”,CHIN.PHYS.LETT.25(6), 2194-2197, (2008).

37.Y. M. Zhou, G. Yu,L. M. Wei, K. H. Gao,W. Z. Zhou, T. Lin, L. Y. Shang, S. L. Guo, J. H. Chu, N.Dai, and D. G. Austing, “Experimental approaches to zero-field spin splittingin a gated high-mobility In0.53Ga0.47As/InP quantum wellstructure: Weak antilocalization and beating pattern”,J. Appl. Phys.107(5),053708(2010).

38.黎光旭,叶姗,彭雯琦,周文政,蓝志强,“HfCl4ZrCl4掺杂对NaAlH4LiAlH4储氢性能的影响广西大学学报.自然科学版38( 4),467-475(2013).

39.Y. M. Zhou, L. Y. Shang, G. Yu, K. H. Gao,W. Z. Zhou, T. Lin, S. L. Guo,J. H. Chu, N. Dai, and D. G. Austing, “Transport properties of aspin-split two-dimensional electron gas in an In0.53Ga0.47As/InPquantum well structure”,J.Appl. Phys.106(7),073722(2009).

40.Xiaojuan Li, Wenhui Lu, Weiling Dong, Qi Chen, Dan Wu,Wenzheng Zhou, and Liwei Chen,“Si/PEDOT hybrid core/shell nanowire arrays as photoelectrodes forphotoelectrochemical watersplitting”,Nanoscale,5(12), 5257-5261 (2013).

41.HAN Kui(韩奎), TANG Ning(唐宁), DUAN Jun-Xi(段俊熙), LU Fang-Chao(卢芳超), LIU Yu-Chi(刘禹驰), SHEN Bo(沈波),ZHOUWen-Zheng(周文政), LIN Tie(林铁), SUN Lei(孙雷),YU Guo-Lin(俞国林),     CHU Jun-Hao   (褚君浩)Oscillations of Low-Field Magnetoresistivity of Two-Dimensional ElectronGases in Al0.22Ga0.78N/GaN Heterostructures in a WeakLocalization Region”,CHIN. PHYS. LETT.28 (8), 087302, (2011)

42.X. Z. Liu, Y. G. Xu, G. Yu, L. M. Wei, T.Lin, S. L. Guo, J. H. Chu,W. Z. Zhou,Y. G. Zhang, and David J. Lockwood, “The effective g-factor in In0.53Ga0.47As/In0.52Al0.48Asquantum well investigated by magnetotransport measurement”,J. Appl. Phys.113(3), 033704 (2013).

43.N.Tang, B. Shen, M. J. Wang, Z. J. Yang, K. Xu, and G. Y. Zhang, T. Lin, B. Zhu,W. Z. Zhou, and J. H. Chu “Effective mass of the two-dimensionalelectron gas and band nonparabolicity in AlxGa1-xN/GaNheterostructures”,Appl.Phys. Lett.88(17),172115 (2006).

44.K. H. Gao, G. Yu, Y. M. Zhou, L. M. Wei, T. Lin,L. Y. Shang, L. Sun, R. Yang,W. Z.Zhou, N. Dai, J. H. Chu, D. G. Austing, Y. Gu, and Y. G. Zhang, “Insulator-quantum Hallconductor transition in high electron density gated InGaAs/InAlAs quantum wells”,J. Appl. Phys.108(6),063701(2010).

45.N.Tang, B. Shen, K. Han, Z. J. Yang, K. Xu, G. Y. Zhang, T. Lin, B. Zhu,W. Z. Zhou, L. Y. Shang, S. L.Guo, and J. H. Chu, “Origin of split peaks in the oscillatory magnetoresistancein AlxGa1–xN/GaN heterostructures”,J. Appl. Phys.100(7), 073704 (2006).

46.Ning Tang, Bo Shen,Xiao-Wei He, Kui Han, Zhi-Jian Yang, Zhi-Xin Qin, Guo-YiZhang,Tie Lin, Bo Zhu,Wen-Zheng Zhou, Li-Yan Shang,and Jun-Hao ChuInfluence of the illuminationon the beating patterns in the oscillatory magnetoresistance in AlxGa1−xN/GaNheterostructures”,Phys. Rev. B76(15), 155303 (2007).

47.N.Tang, B. Shen, M. J. Wang, K. Han, Z. J. Yang, K. Xu, and G. Y. Zhang, T. Lin,B. Zhu,W. Z. Zhou, and J. H.Chu “Beating patterns in theoscillatory magnetoresistance originated from zero-field spin splitting in AlxGa1-xN/GaNheterostructures”,Appl.Phys. Lett.88(17),172112 (2006).

48.Ning Tang, Bo Shen, Kui Han,Xiao-Wei He, Chun-Ming Yin, Zhi-Jian Yang, Zhi-Xin Qin, Guo-Yi Zhang, Tie Lin,Wen-ZhengZhou, Li-Yan Shang, Jun-Hao Chu, “Influence of the illumination on thesubband structure and occupation in AlxGa1−xN/GaNheterostructures”,Appl. Phys. A96(4), 953–957 (2009).

49.K.Han, B. Shen, N. Tang, Y.Q. Tang, X.W. He, Z.X. Qin, Z.J. Yang, G.Y. Zhang, T.Lin, B. Zhu,W. Z. Zhou, J.H.Chu, “Observation of the transition from diffusive regime to ballistic regimeof the 2DEG transport property in AlxGa1-xN/GaNheterostructures”,Phys. Lett. A,366(3), 267-270 (2007).

50.N.Tang, B. Shen, X. W. He, K. Han, Y. Q. Tang, Z. J. Yang, Z. X. Qin, G. Y.Zhang, T. Lin, B. Zhu,W. Z. Zhou,L. Y. Shang, and J. H. Chu, “Influence of the illumination on the spinsplitting of the two-dimensional electron gas in AlxGa1-xN/GaNheterostructures”,PHYSICA STATUS SOLIDIC - CURRENT TOPICS IN SOLID STATE PHYSICS, 5(6), 2339-2341 (2008).

 

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