学术骨干 
 教师队伍 
冯哲川
2016-03-18 11:57  

 

冯哲川

 

冯哲川,男,194412月出生,美籍华人,物理科学与工程技术学院杰出外籍教授。毕业于北京大学(1968年本科,1982年获硕士学位)及 美国匹兹堡大学,于1987年获博士学位。具有30多年从事半导体材料和器件方面的丰富研究经历,曾工作于Emory大学,新加坡国立大学,美国乔治亚理工学院,EMCORE公司,新加坡材料研究及工程学院,和台湾大学。20151月台湾大学工作11年后退休,于3月受聘加入广西大学物理学院为杰出教授,组建并领导光电子材料与探测技术实验室(依托广西相对论天体物理重点实验室)。

 

通讯地址:广西南宁市大学东路100号广西大学物理科学与工程技术学院

 

E-mailfengzc@gxu.edu.cn

 

获奖及荣誉

亚太化学气相沉积国际会议组委会委员

白光LED和固态照明国际会议组委会委员

台湾镀膜和薄膜技术协会理事

美国光学工程学会(SPIE)Fellow (会士)  

美国物理学会(APS)Lifetime member (终身会员)  

 

主讲课程

研究生:光电子学, 光电子材料与器件

 

研究方向

主要研究方向和领域着重于宽能隙半导体的多学科材料研究及奈米器件制程及研发,金属氧化物化学气相外延技术长晶及研究表面科学,同步辐射,多学科检测技术在光学/电子材料/结构的应用计算机理论仿真宽能隙半导体及奈米结构之光学和材料特性。已出版11本关于先进化合物半导体材料和微观结构、多孔硅、碳化硅、固态照明与LED和三族氮化物的英文专书,发表文章700多篇,400多篇被SCI收录,被引用次数超过4900次。

 

研究生培养

为我校化学工程二级学科博士生导师并材料物理与材料化学,光电子材料与器件二级学科硕士生导师。目前与光电子材料与探测技术团队内五名教协同指导18名硕士研究生。

 

主持科研项目

曾主持台湾大学内的十余项科研项目;目前向国家自然基金委提交了两项主持科研项目。

 

论文、专著及专利

<Books &Journal Guest Editor:

<<Handbookof Solid-StateLighting and LEDs:Volume 1) General,GaN-based and Deep UV LEDs, and Volume 2) Nano-structural and other LEDs, LaserDiodes>>,24-Chapters, 705-pages, Editor: Zhe Chuan FENG,CRC press,Taylor& Francis Group, London/NewYork, 2017.

<<III-NitrideMaterials, Devices and Nanostructures>>, 11-Chapters,410-pages, Zhe Chuan FENG (ed.), WorldScientific Publishing, Singapore, 2017.

<<Handbookof Zinc Oxides and Related Materials:Volume1) Materials, and Volume 2) Devices and Nano-Engineering>>,Editor: Zhe Chuan FENG,CRC press, Taylor& Francis Group, London/NewYork, 440pp+640pp, 2012.

<<III-NitrideDevices and Nanoengineering>>, Zhe Chuan FENG (ed.), ImperiaCollege Press,London,462pp,2008.  

<<III-NitrideSemiconductor Materials>>, Editor: Zhe Chuan FENG,ImperiaCollege Press,London,440pp,2006.

<<SiCPower Materials Devices andApplications>>, Editor: Zhe Chuan FENG,Springer, Berlin,450 pp,2004.

<<SiliconCarbide: Materials, Processings and Devices>>, Editors:Zhe Chuan FENG and JianH. ZHAO,Taylor& Francis Books, Inc., New York, 416pp, 2003.  

<<PorousSilicon>>, Zhe Chuan FENG, Raphael TSU (ed.), WorldScientific Publishing, Singapore, 488pp, 1994.

<<SemiconductorInterfaces, Microstructures and Devices: Properties and Application>>,Editor:Zhe Chuan FENG,CRC Publishing, UK, 308pp, 1993.  

<<SemiconductorInterfaces and Microstructures>>, Editor:Zhe Chuan FENG,World Scientific Publishing, Singapore, 328pp, 1992.  

Z.C.Feng, C.F. Chen, C.T. Kuo, K. Williams and W.Shan,Guest Editors: Thin Solid Films, a special issue Vol.498, no. 1-2 (2006 March) for the 3rd Asian Conference on Chemical vapordeposition (3rd Asian CVD).

Z.C.Feng, C.F. Chen, C.T. Kuo, K. Williams and W.Shan,Guest Editors: Surface and Coating Technology, aspecial issue Vol. 200 (2006 Feb.) for the 3rd Asian Conference on Chemicalvapor deposition.

C.T.Kuo, J.C. Angus, J.P. Chu, Z.C. Feng, J.H. Huang and J.H.Hsieh,Guest Editors: Thin Solid Films, a special issue Vol.518, no. 24 (2010 October) for Taiwan Association for Coatings and ThinFilms Technology (TACT 2009).

J.-L.Huang, J.-M. Ting, J.-H. Hsieh, Z.C. Feng, J.P. Chu, H.-H. Park,C.-P. Liu and E. Kusano, Guest Editors: Thin Solid Films, aspecial issue Vol. 529, (2011 Feb. 1) for Taiwan Association forCoatings and Thin Films Technology (TACT 2011).

GoogleScholar Citations.htmlCitations (all): 4982, h-index: 36, i10-index: 114; since 2013: 1552,20,46. {Recordson 2018/2/20}

Journal papers & bookchapters (>300 in Science CitationIndex, cited:4,982till 2018/2/20):

2019:(11)

330.  Hong Yang, Yingda Qian, Chi Zhang, Dong-Sing Wuu, Devki N. Talwar, Hao-Hsiung Lin, Jyh-Fu Lee, Lingyu Wan*, Kaiyan He, and Zhe Chuan Feng*, “Surface/structural characteristics and band alignments of thin Ga2O3 films grown on sapphire by pulse laser deposition”, Applied Surface Science, 479, 1246-53 (2019). DOI: https://doi.org/10.1016/j.apsusc.2019.02.069 SCI-II

329.  Hanling Long, Jiangnan Dai, Yi Zhang, Shuai Wang, Bo Tan, Shuang Zhang, Linlin Xu, Maocheng Shan, Zhe Chuan Feng, Hao-Chung Kuo, and Changqing Chen, “High quality 10.6 mm AlN grown on pyramidal nano-patterned sapphire substrate by MOCVD”, Applied Physics Letters 114 (1) 042101-1_6 (2019). doi: 10.1063/1.5074177 SCI-II

328.  Qile Wang, Jian Chen, Hao Lu, Pan Huang, Jiabin Wang, Mingkai Li, Yinmei Lu, Gang Chang, Zhe Chuan Feng, Yunbin He, “Structures, compositions, and optical properties of ZnCr2O4 films grown epitaxially on c-sapphire by pulsed laser deposition”, Applied Surface Science 475 (1), 820–827 (2019). https://doi.org/10.1016/j.apsusc.2019.01.039 SCI-II  

327.  Jianwei Ben, Xiaojuan Sun, Yuping Jia, Ke Jiang, Zhiming shi, You Wu, Cuihong Kai, Yong Wang, Xuguang Luo, Zhe Chuan Feng, and Dabing Li , “Influence of dislocations on the refractive index of AlN by Nanoscale Strain Field”, Nanoscale Research Letters, 14, 184 (2019). https://doi.org/10.1186/s11671-019-3018-7. SCI-II.

326.  Xiwen Lin, Daihua Chen, Wenlong Niu, Chiung-Yi Huang, Ray Hua Horng, Li-Chung Cheng, Devki N. Talwar, Hao Hsiung Lin, Jyh-Fu Lee, Zhe Chuan Feng* and Lingyu Wan*, “The local structure and crystal phase evolution of ZnGaO thin Films grown by metal organic chemical vapor deposition”, Journal of Crystal Growth, 520, 89-95 (2019). DOI: 10.1016/j.jcrysgro.2019.05.024. SCI-III

325.  Hong Yang, Yao Liu*, Xuguang Luo, Yao Li, Dong-Sing Wuu, Kaiyan He, and Zhe Chuan Feng*, “Growth Temperature and Thickness Effects on Material Properties of Ga2O3 Films Grown by Pulsed Laser Deposition”, Superlattices and Microstructures, DOI: 10.1016/j.spmi.2019.05.028. (2019) SCI-III

324.  Jiaqi He, Xiong Zhang, Jianguo Zhao, Shuai Chen, Zili Wu, Aijie Fan, Youhua Zhu, Meiyu Wang, Zhe Chuan Feng, Guohua Hu, Yiping Cui, “Study of NH3 flow duty-ratio in pulsed-flow epitaxial growth of non-polar a-planeAl0.34Ga0.66N films”, Materials Science in Semiconductor Processing 90, 219-224 (2019). https://doi.org/10.1016/j.mssp.2018.10.029 SCI-III

323.  Jiaxi Wang, Li Luo, Chunlong Han, Rui Yun, Xiaofen Li, Xingui Tang, Yanjuan Zhu, Zhaogang Nie, Weiren Zhao, Zhe Chuan Feng, “The microstructure, ferroelectric, optical and photovoltaic properties of BiFeO3 thin films prepared by low temperature sol-gel method”, Materials, 12, 1444 (2019). doi:10.3390/ma12091444. SCI-III

322.  Chi Zhang, Yao Li, Yuanlan Liang, Devki N Talwar, Shih-Yung Huang, Qingxuan Li, Fangze Wang, Lingyu Wan*, Daniel Seidlitz, Nikolaus Dietz, Dong-Sing Wuu, Kaiyan He*, Zhe Chuan Feng*, “Surface and optical properties of In-rich InGaN layers grown on sapphire by migration-enhanced plasma assisted metal organic chemical vapor deposition”, Materials Research Express, 6, 016407(2019); https://doi.org/10.1088/2053-1591/aae4b5 (2018). SCI-IV

321.  Yuanlan Liang, Xuguang Luo, Qingxuan Li, Tao Lin, Ian Ferguson, Qingyi Yang, Lingyu Wan, and Zhe Chuan Feng*, “Optical Properties of InSb Thin Films Grown on GaAs investigated by temperature-dependent spectroscopic ellipsometry”, ZhPS, Journal of Applied Spectroscopy, 86 (2), 257-264 (2019) May. DOI: 10.1007/s10812-019-00812-6. SCI-IV

320.  Devki N. Talwar, Hao-Hsiung Lin and Zhe Chuan Feng, "Phonon characteristics of heavily Si-doped InAs grown by gas source molecular beam epitaxy", Journal of Raman Spectroscopy, to be published. SCI-II



2018:(17)

319.   Ju He, Shuai Wang, Jingwen Chen, Feng Wu, Jiangnan Dai, Hanling Long, Yi Zhang, Wei Zhang, Zhe Chuan Feng, Jun Zhang, Shida Du, Lei Ye3 and Changqing Chen, “Localized surface plasmon enhanced deep UV-emitting of AlGaN based multi-quantum wells by Al nanoparticles on SiO2 dielectric interlayer”; Nanotechnology, 29, 195203 (2018). SCI-I

318.   Jianguo Zhao, Xiong Zhang, Jiaqi He, Shuai Chen, Qian Dai, Zili Wu, Abbas Nasir, Nan Wang, Zhe Chuan Feng, and Yiping Cui, “High internal quantum efficiency of non-polar a-plane AlGaN-based multiple quantum wells grown on r-plane sapphire substrate”, ACS Photonics, 5, 1503 (2018). April 24, DOI: 10.1021/acsphotonics.8b00283. SCI-I   {cited: 4}

317.   Yao Li, Chi Zhang, Xuguang Luo, Yuanlan Liang, Dong-Sing Wuu, Chin-Che Tin, Xiang Lu, Kaiyan He*, Lingyu Wan, Zhe Chuan Feng*, “Surface, Structural and Optical Properties of AlN thin films grown on different face sapphire substrates by metalorganic chemical vapor deposition”, Applied Surface Science 458 (11),972-7 (2018). online: 25-JUL SCI-II  ntuhttps://doi.org/10.1016/j.apsusc.2018.07.138.

316.   Tao Lin, Zhi Yan Zhou, Yao Min Huang, Kun Yang, Bai Jun Zhang, Zhe Chuan Feng*, “Strain-Controlled Recombination in InGaN/GaN Multiple Quantum Wells on Silicon Substrates”, Nanoscale Research Letters, 13 (8),243_1-7 (2018).   SCI-II    DOI: 10.1186/s11671-018-2663-6.

315.  Lingyu Wan, Dishu Zhao, Fangzhe Wang, Gu Xu, Chin-Che Tin, Tao Lin, Zhaochi Feng and Zhe Chuan Feng*, “Efficient quality analysis of homo-epitaxial 4H-SiC thin films by the forbidden Raman Scattering Mode”, Optical Materials Express, 8 (1),119-127 (2018). SCI-III {cited: 2}

314.  Tao Lin, Fang Zhe Wang, Chih-Hsien Cheng, Shuai Chen, Zhe Chuan Feng*, Gong-Ru Lin, “Strain-Related Recombination Mechanisms in Polar InGaN/GaN MQWs on Amorphous SiC”, Opt. Mat. Express, 8 (5),1100-06 (2018).  SCI-III {cited: 4}

313.   Ming Tian, Yingda Qian, Chi Zhang, Lin Li, Shude Yao, Ian T. Ferguson, Devki N. Talwar, Junyi Zhai, Dehuan Meng, Kaiyan He*, Lingyu Wan, Zhe Chuan Feng*, “Investigation of high indium-composition InGaN/GaN heterostructures on ZnO grown by metallic organic chemical vapor deposition”, Optical Materials Express, 8 (10),3184_1-13 (2018). SCI-III

312.  Xuguang Luo, Yuanlan Liang, Hong Yang, Yuanlan Liang, Kaiyan He*, Wenhong Sun, Hao-Hsiung Lin, Shude Yao, Xiang Lu, Lingyu Wan, Zhe Chuan Feng*, “Investigation of HfO2 Thin Films on Si by X-ray Photoelectron Spectroscopy, Rutherford Backscattering, Grazing Incidence X-ray Diffraction and Variable Angle Spectroscopic Ellipsometry”, Crystals 8, 248 (2018).  SCI-III {Cited: 1}

311.  Honghui Liu, Tao Lin, Lingyu Wan*, Gu Xu, Zhe Chuan Feng*, Hao-Chung Kuo, “Modelling of microcavity effect in InGaN/GaN heterostructures for interfacial study”, Materials Research Express, 5, (7) 086201_1-10 (2018). https://doi.org/10.1088/2053-1591/aad11e. SCI-IV  

310.  Devki N. Talwar, Lingyu Wan, Chin-Che Tin, Hao-Hsiung Lin and Zhe Chuan Feng, “Spectroscopic phonon and extended x-ray absorption fine structure measurements on 3C-SiC/Si (001) epifilms”, Appl. Surf. Sci., 427,302-310 (2018).SCI-II {cited: 2}

309.  Hanling Long, Shuai Wang, Feng Wu, Jun Zhang, Jingwen Chen, Renli Liang, Zhe Chuan Feng, Jiangnan Dai, and Changqing Chen, “Internal strain induced significant enhancement of deep ultraviolet light extraction efficiency for AlGaN multiple quantum wells grown by MOCVD”, Optics Express, 26 (2), 680-686 (2018). SCI-II {cited: 3}

308.  Zili Wu, Xiong Zhang, Aijie Fan, Qian Dai, Jianguo Zhao, Shuai Chen, Zhe Chuan Feng, and Yiping Cui, “Enhanced hole concentration in nonpolar a-plane p-AlGaN film with multiple-step rapid thermal annealing technique”, J. Physics D:Appl. Phys., 51, 095101 (2018). SCI-II 

307.  Jianguo Zhao, Xiong Zhang, Jiaqi He, Aljie Fan, Shuai Chen, Zili Wu, Youhua Zhu, Meiyu Wang, Zhe Chuan Feng, Yiping Cui, “Improved optical and structural properties of nonpolar a-plane AlGaN epi-layers after Cp2Mg and NH3 treatments”, Optical Materials Express, 8(9), 2586-2591 (2018).  SCI-III    

306.  Devki N. Talwar, P. Becla, Hao-Hsiung Lin, and Zhe Chuan Feng, “Optical and structural characteristics of Bridgman grown cubic Zn1-xMnxTe alloys”, Materials Chemistry and Physics, 220 (7), 460-8 (2018).  SCI-III https://doi.org/10.1016/j.matchemphys.2018.07.042.

305.  Yingda Qian, Yuanlan Liang, Xuguang Luo, Kaiyan He*, Wenhong Sun*,Hao-Hsiung Lin, Devki N Talwar, Ting-Shan Chan, Ian Ferguson, Lingyu Wan, Qingyi Yang, and Zhe Chuan Feng*, “Optical and structural properties of InSb thin films grown on GaAs with different V/III ratios by MOCVD”, Advances in Materials Science and Engineering, Volume 2018, Article ID 5016435, 11 pages; https://doi.org/10.1155/2018/5016435 SCI-IV  

304.  ZHAO Di-shu, WANG Fang-ze, WAN Ling-yu, YANGQing-yi, FENG Zhe Chuan, “Raman scattering study on anisotropic property in wurtzite 4H-SiC”, Journal of Light Scattering(光散射学报), 30 (6), 37-42  (2018).   核心期刊

303.  梁远兰,林涛,杨庆怡,万玲玉,冯哲川,“InAlN薄膜的变温椭圆偏振光谱研究”,广西大学学报,第43卷,第5期,1954-1959页(2018.核心期刊


2017:(16)

302.  Shuai  Chen, Qingxuan Li, Ian Ferguson, Tao Lin, Lingyu Wan, Zhe Chuan Feng,* Liping  Zhu, Zhizhen Ye, “Spectroscopic Ellipsometry Studies on ZnCdO Thin Films with  Different Cd Concentrations Grown by Pulsed Laser Deposition”, Appl. Surf.  Sci., 421, 383-8 (2017).  SCI-II    

301. Yao Liu, Qing Xuan Li, Ling Yu  Wan, Bahadir Kucukgok, Ian T. Ferguson, Xiong Zhang, Zhe Chuan Feng, Na Lu,  “Temperature-Dependent Optical and Structure Properties of AlxGa1-xN  by Spectroscopic Ellipsometry”, Appl. Surf. Sci., 421, 389-396(2017).   SCI-II

300.  Shuai  Chen, Xiaodong Jiang, Chin-Che Tin, Lingyu Wan and Zhe Chuan Feng, “Adducing  crystalline features from Raman scattering studies of cubic SiC using  different excitation wavelengths”, J. Phys. D: Applied Physics, 50,  115102 (2017). SCI-II   {cited: 1}    

299.  Tao  Lin, Hao Chung Kuo, Xiao Dong Jiang and Zhe Chuan Feng*, “Recombination  Pathways in Green InGaN/GaN multiple quantum wells”, Nanoscale Research  Letters, 12, 137 (2017).  SCI-II    {cited: 5}      

298.  Zhe  Chuan Feng, Qingxuan Li, Lingyu Wan and Gu Xu, “Variation of phonon coupling  factors in the photoluminescence of Cadmium Telluride by variable excitation  power”, Optical Materials Express, 7, (3)808-816 (2017).  SCI-II    

297.  LIN  Shu-Yu, WU Feng, CHEN Chang-Qing, LIANG Yi, WAN Ling-Yu, and Zhe Chuan FENG,  “Study on the optical properties of AlN film by the temperature-dependent  spectroscopic ellipsometry”, J. Infrared & minimeter wave, 36,  no.3, 269-273 (2017). SCI-IV    

296. Y  Liu, E Ghafari, X Jiang, Y Feng, ZC Feng, I Ferguson, N Lu, Temperature-dependent  Optical Properties of AlN Thin Films by Spectroscopy Ellipsometry, MRS  Advances 2 (5), 323-328 (2017). ESCI (Emerging Sources Citation Index)

295.  Tao  Lin and Zhe Chuan Feng,“Photoluminescence Dynamics in InGaN/GaN Multiple  Quantum Well Light Emitting Diodes”, Book Chapter 9 in <<Handbook of  Solid-State Lighting and LEDs >>, ISBN 9781498741415, Editor: Zhe Chuan  FENG, Pages 185-216, CRC press, Taylor & Francis Group, New York, May  (2017).    

294.  Yi  Liang, Xiaodong Jiang, Devki N. Talwar, Liangyu Wan, Gu Xu and Zhe Chuan  Feng, “Investigating Structural and Optical Characteristics of III-Nitride  Semiconductor Materials”, Book Chapter 7, pp.209-261, in <<III-Nitride  Materials, Devices and Nanostructures>>, Editor: Zhe Chuan FENG, ISBN:  978-1-78634-318-5, World Scientific Publishing Press, Singapore (2017).  

293.  Gu  Xu, Guizi Li, Shuaiya Li, Zhe Chuan Feng, “Non-patchy strategy for  inter-atomic distances from Extended X-ray Absorption Fine Structure”,  Scientific Reports, 7, 42143 (2017).  SCI-I 

292.  Deng  Xie, Zhi Ren Qiu, Shiyuan Liu, Ting Mei, Zhe Chuan Feng, “Combining  Spectroscopic Ellipsometry and X-ray Diffraction Study on a series of Si1-xGex  film and superlattice sandwiched by Si”, Appl. Surf. Sci., 421,  748-754 (2017).  SCI-II  

291.  Feng  Wu, Haiding Sun, Idris A. Ajia, Iman S. Roqan, Daliang Zhang, Jiangnan Dai,  Changqing Chen, Zhe Chuan Feng, and Xiaohang Li, “Significant internal quantum  efficiency enhancement of GaN/AlGaN multiple quantum wells emitting at ~350  nm via step quantum well structure design”, J. Phys. D: Appl. Phys. 50,  245101(2017).  SCI-II   {Cited:  6}  

290.  Jingwen  Chen, Jun Zhang, Jiangnan Dai, Feng Wu, Shuai Wang, Hanling Long, Renli  Liang, Jin Xu, Changqing Chen, Zhiwu Tang, Yunbin He, Mingkai Li, Zhe Chuan  Feng, “Significant anisotropic optical properties of heteroepitaxial strained  nonpolar a-plane ZnO layers grown on AlxGa1-xN  templates”, Optical Materials Express 7(11), 3944-51 (2017). SCI-II      {Cited: 1}  

289.  Jianguo  Zhao, Xiong Zhang, Zili Wu, Qian Dai, Nan Wang, Jiaqi He, Shuai Chen, Zhe  Chuan Feng, and Yiping Cui, “Reduction in anisotropy and strain for non-polar  a-plane GaN epi-layers with nano-scale island-like SiNx  interlayer”, J. Alloys & Compounds 729, 992-996 (2017). SCI-II  

288.  Deng  Xie, Zhi Ren Qiu, Yao Liu, Devki N Talwar, Lingyu Wan, Xiong Zhang, Ting Mei,  Ian T Ferguson and Zhe Chuan Feng, Influence of  high-temperature AlN intermediate layer on the optical properties of MOCVD  grown AlGaN films, Materials Research Express, 4, 025903  (2017).  SCI-III  

287.  Shuchang  Wang, Xiong Zhang, Qian Dai, Wenhua Guo, Fangqiang Li, Jinfu Feng, Zhe Chuan  Feng and Yiping Cui, “An x-ray diffraction and Raman spectroscopy  investigation of AlGaN epi-layers with high Al composition”, Optik -  International Journal for Light and Electron Optics, 131, 201-6  (2017).  SCI-IV   {cited: 2}  

2016:(9)

286.  Tao Lin, Zhi Ren Qiu, Jer-Ren Yang, Long Wei  Ding, Yihua Gao, Zhe Chuan Feng, “Investigation of photoluminescence dynamics  in InGaN/GaN multiple quantum wells”, Materials Letters 173, 170–173  (2016).  SCI-II{cited: 2}  

285.  Qing-Xuan  LI, Yu-Jia LIU, Yao Liu, Yi Liang, Hao-Hsiung LIN, Zyh-Fu Lee, Na Lu, Ian T.  Ferguson, Ling-Yu WAN and Zhe Chuan Feng*, GaN Films under  Different Growth Mechanisms Studied by Synchrotron X-ray Absorption  Spectroscopy, Proceedings of 2nd Annual International Conference on Advanced  Material Engineering (AME 2016), the series AER, ISSN 2352-5401, vol. 85,  p.1003-7 (2016).  

284.  Shuai  Chen, Deng Xie, Zhi Ren Qiu, Chin-Che Tin, Hong Chao Wang, Ting Mei, Lingyu  Wan, and Zhe Chuan Feng, “Raman Scattering Studies on CVD grown cubic SiC  Thin Films on Si”, Journal of Light Scattering (光散射学报), 28, 125-130 (2016).  

283. F.  Wu, Y. Li, W. Tian, J. Zhang, S. Wang, J. Dai, Z.C. Feng, C. Chen, Two  carrier localizations in GaN/AlGaN multiquantum wells investigated by  temperature dependent photoluminescence, physica status solidi (c) 13 (56),  239-241 (2016).

282.  Zili  Wu, Xiong Zhang, Tianhui Liang, Zhe Chuan Feng, Yiping Cui, “Effects of  growth temperature on characteristics of Mg-delta-doped p-AlInGaN  epi-layers”, Superlattices and Microstructures 98, 181-186 (2016).SCI-III{cited: 1}  

281.  Hanling  Long, Feng Wu, Jun Zhang, Shuai Wang, Jingwen Chen, Chong Zhao, Zhe Chuan  Feng, Jintong Xu, Xiangyang Li, Jiangnan Dai, Changqing Chen, “Anisotropic  optical polarization dependence on internal strain in AlGaN epilayer grown on  AlxGa1-xN templates", J. Phys. D: Applied Physics,  49, 415103 (2016).SCI-II {cited: 4}  

280.  Xin  Xin, Yu-Ming Zhang, Hong-Ming Wu, Zhe Chuan Feng, Hao-Hsiung Lin, Ren-Xu Jia,  “Kinetic mechanism of V-shaped twinning in 3C/4H-SiC heteroepitaxy”, J. Vac.  Sci. Tech. A34, 031104 (2016).  SCI-III   {cited: 1}  

279.  Fanming  Zeng, Lihong Zhu, Wei Liu, Xiaoying Li, Weicui Liu, Bo-Jhih Chen, Yueh-Chien  Lee, Zhe Chuan Feng, Baolin Liu, “Carrier localization and phonon-assisted  hopping effects in semipolar InGaN/GaN light-emitting dioses grown by  selective area epitaxy”, J. Alloys & Compounds 656, 881-6  (2016).  SCI-II{cited: 4}  

278. Deng Xie, Zhi Ren Qiu, Lingyu Wan, Chin-Che Tin, Ting Mei  and Zhe Chuan Feng, "Characterization of Optical Properties of Wide Band  Gap Semiconductor Thin Film with the Combination of Ellipsometry and Infrared  Spectrum", Journal of Light Scattering (光散射学报), 28, 214-219 (2016).

2015:(6)

277.  Dongsheng Peng, Congcong Tran, Zhigang Chen, Zhechuan Feng, “Study  of Well Width in InGaN/GaN Multiple Quantum Well Light-Emitting Diodes”, Journal of nanoscience and nanotechnology 15 (6),  4604-4607 (2015).  

276.  Feng  Wu, Jun Zhang, Shuai Wang, Hanling Long, Jiangnan Dai, Zhe Chuan Feng, Zheng  Gong, and Changqing Chen, “Quantum confinement dependence of exciton  localization in a-plane GaN/AlGaN multiquantum wells investigated by  temperature dependent photoluminescence”, Opt. Mat. Express 5, 246280  (2015).     {Cited: 1}  

275.  WANG  Hong-Chao, HE Yi-Ting, SUN Hua-Yang, QIU Zhi-Ren,XIE  Deng, MEI Ting, Tin C. C., FENG Zhe-Chuan, “Temperature Dependence of Raman Scattering in 4H-SiC Films  under Different Growth Conditions”, Chinese Phys. Lett. 32, 047801  (2015).  {cited: 1}  

274. Bahadir Kucukgok, Na Lu, Ian T.  Ferguson, Shu Chang Wang, Xiong Zhang and Zhe Chuan Feng, "Structural  and optical analyses of AlxGa1xN thin films grown by metal organic  chemical vapor deposition", Jpn. J. Appl. Phys. 54 02BA05 (2015).  {cited: 5}  

273.  Xiaodong  Jiang, Li Lei, Qiwei Hu, Zhe Chuan Feng, Duanwei He, “High-pressure Raman  spectroscopy of Re3N crystals”, Solid State Communications, 201,  107-110 (2015). {cited: 6}    

272.  Deng  Xie, Zhi Ren Qiu, Devki N. Talwar, Yi Liu, Jen-Hao Song, Jow-Lay Huang, Ting  Mei, Chee Wee Liu and Zhe Chuan Feng, “Investigation of Optical Parameters of  Boron Doped Aluminum Nitride Films Grown on Diamond Using Spectroscopic  Ellipsometery”, International Journal of Nano Technologies (IJNT), 12,  97-110 (2015).  {cited: 1}  

2014:(11)

271.  Yi  Ting He, Xiao Yan Lei, Zhi Ren Qiu, Bao Ping Zhang, Na Lu, Ian T. Ferguson,  and Zhe Chuan Feng, “The characteristics of optical pumped GaN-based vertical  cavity surface emitting laser structures”, Advanced Mechanics and Materials,  692, 187-190(2014). EI  

270.  Shuchang  Wang, Xiong Zhang, Muchi Liu, Bowei Wang, Zhe Chuan Feng, Yiping Cui, “Study  of lattice deformation and atomic bond length for AlxGa1−xN  epi-layers with synchrotron radiation X-ray absorption spectroscopy”, J Mater  Sci: Mater Electron. 25, 4800–4805 (2014).    SCI   {Cited:  1}  

269.  Devki  N. Talwar, Ying Chieh Liao, Li Chyong Chen, Kuei Hsien Chen and Zhe Chuan  Feng, "Optical Properties of Plasma-Assisted Molecular Beam Epitaxy  Grown InN/Sapphire", Optical Materials 37, 1-4(2014).        SCI{cited: 3}          

268.  Lingmin  Kong, Zhe Chuan Feng, Shusheng Zhang, Sheng Xie, Yunqing Zhou, Rui Wang,  Cunxi Zhang, Zhaocun Zong, Hongxia Wang, Qian Qiao, Zhengyun Wu, “Effects of  InAlAs strain reducing layer to photoluminescence properties of InAs quantum  dots in InGaAs/GaAs quantum well”, Thin Solid Films,562,  440-444 (2014).  SCI {cited: 1}    

267.  Devki  Talwar, Zhe Chuan Feng, Jyh-Fu Lee, P. Becla, "Extended x-ray absorption  fine structure and micro-Raman spectra of Bridgman grown Cd1-xZnxTe  ternary alloys", Materials Research Express 1, 015018 (pp.13)  (2014).      SCI{cited: 4}    

266.  Shuchang  Wang, Xiong Zhang, Zhe Chuan Feng and Yiping Cui, “Surface chemical and local  electronic properties of AlxGa1-xN epi-layers grown by  MOCVD”, Optics Express 22, 17440-7 (2014).  SCI {cited: 5}    

265.  C.  G. Jin, Y. Yang, Z. F. Wu, L. J. Zhuge, Q. Han, X. M. Wu, Y. Y. Lian Z. C.  Feng, “Tunable ferromagnetic behavior in Cr doped ZnO nanorod arrays through  defect engineering”,  J. Mater. Chem. C, 2, 2992-7 (2014). { SCI-I, cited:5}  

264.  Hao  Long, Songzhan Li, Xiaoming Mo, Haoning Wang, Zhao Chen, Zhe Chuan Feng, and  Guojia Fang, “Enhanced electroluminescence using Ta2O5/ZnO/HfO2  asymmetric double heterostructure in ZnO/GaN-based light emitting diodes”,  Optics Express 22, A833 (pp.9) (2014).   SCI {cited: 3}    

263.  Zhi  Li, Junjie Kang, Bo Wei Wang, Hongjian Li, Yu Hsiang Weng, Yueh-Chien Lee,  Zhiqiang Liu, Xiaoyan Yi, Zhe Chuan Feng, and Guohong Wang, “Two distinct  carrier localization in green light-emitting diodes with InGaN/GaN multiple  quantum wells”, J. Appl. Phys. 115, 083112 (2014).  SCI {cited: 28}    

262.  S.Y.  Hu, Y.C. Lee, Y.H. Weng, I.T. Ferguson, Z.C. Feng, “Characterization of  temperature-dependent photoluminescence properties of InAlGaN quaternary  alloys”, J. Alloys & Compounds, 587, 154-7 (2014).    SCI  {cited: 4}    

261. Wei Zheng, Hao-Hsiung Lin, Zhe Chuan Feng, Fan-Hsiu Chang,  Jyh-Fu Lee, Chee Wee Liu, Dong-Sing Wuu, and Rui Sheng Zheng, Lattice  deformation of wurtzite MgxZn1xO alloys: An extended X-ray  absorption fine structure study, J. Alloys & Compounds,  582, 157160 (2014).  {cited:6}

2013:(20)

260.  Wei  Zheng, Zhe Chuan Feng, Rui Sheng Zheng, Hao-Hsiung Lin, Xin Qiang Wang,  Ting-Shan Chan, Ling-Yun Jang, and Chee Wee Liu, “Study of high indium InXGa1-XN  alloys with synchrotron radiation”, TELKOMNIKA (Indonesia Journal of  Electrical Engineering and and Computer Science) 11, 906-912 (2013). {Cited: 1}  

259.  Xiang  Ping Shu, Andrew Melton, Zhi Ren Qiu, lan T. Ferguson, and Zhe Chuan Feng,  “Optical probe in gadolinium doped GaN by metalorganic Chemical Vapor  deposition”, Applied Mechanics and Materials 329, 109-113 (2013). EI  

258.  Cheng  Chen, Zhi Ren Qiu, Xiang Ping Shu, Zeng Cheng Li, Jian Ping Liu, and Zhe  Chuan Feng, “Temperature and time-resolved dependence of photoluminescence in  InGaN quantum dots”, Advanced Materials Research, 750-2, 927-930  (2013).EI  

257.  Xiang  Ping Shu, Cheng Chen, Yi Ting He, ZhiRen Qiu, Dong-Sing Wuu and ZheChuan  Feng, “Optical Probe in MgZnO Alloys with Varied Mg Ratios by Metalorganic  Chemical Vapor Deposition”, Adv. Mat. Research, 746, 404-410 (2013).EI   {cited:  1}  

256.  Wei  Zheng, Yu Li Wu, Yen-Ting Chen, Zhe Chuan Feng, Jyh-Fu Lee, P. Becla, and Rui  Sheng Zheng, “Determination of bond lengths and electronic structure of Cd1-xZnxTe  ternary alloys by synchrotron radiation”, Adv. Mat. Res., 706-8, 56-59  (2013). EI {cited: 2}    

255.  Wei  Zheng, Zhe Chuan Feng, Rui Sheng Zheng, Ling-Yun Jangand Chee Wei  Liu, “3C-, 4H- and 6H-SiC bulks studied by Si K-edge X-ray absorption”, Mat.  Sci. Forum, 740-2, 573-6 (2013).   EI   {cited:  1}  

254.  Hua  Yang Sun, Siou-Cheng Lien, Zhi Ren Qiu, Zhe Chuan Feng, “Temperature  dependence of Raman scattering in 4H-SiC”, Mat. Sci. Forum, 740-2,  443-6 (2013).  EI  

253.  Wei  Zheng, Zhe Chuan Feng, Fan-Hsiu Chang, Jyh-Fu Lee, Rui Sheng Zheng, Dong-Sing  Wuu, and Chee Wee Liu, “Study of MgXZn1-XO alloys  (0<x<0.15) by X-ray absorption spectroscopy”, Advanced Materials  Research, 663, 361-5 (2013).  EI  

252.  Wei  Zheng, Ling-Yun Jang, Jenn-min Lee, Rui Sheng Zheng, Chee Wee Liu, P. Becla,  and Zhe Chuan Feng, “Manganese K- and L3-edge X-ray  Absorption Fine Structure Study of Zn1-xMnxTe”,  Advanced Materials Research, 634-638, 2489-92 (2013).EI {cited: 3}    

251.  Cheng  Chen, Xiang Ping Shu, Hua Yang Sun, Zhi Ren Qiu, Ting-Wei Liang, Li-Wei Tu, and Zhe Chuan Feng, “Temperature dependence of Raman scattering  in m-plane GaN with varying III/V ratios”, Advanced Materials Research, 602-604,  1453-6 (2013).  EI  {cited: 1}  

250.  Hua  Yang Sun, Siou-Cheng Lien, Zhi Ren Qiu, Hong Chao Wang, Ting Mei, Chee Wee  Liu, and Zhe Chuan Feng, “Temperature dependence of Raman scattering in bulk  4H-SiC with different carrier concentration”, Optics Express 21, 26475–26482 (2013).  { SCI, cited:8}  

249.  Lihong  Zhu, Fanming Zeng, Wei Liu, Zhechuan Feng, Baolin Liu, Yijun Lu, Yulin Gao,  and Zhong Chen, “Improved Quantum Efficiency in Semipolar (1ˉ101) InGaN/GaN  Quantum Wells Grown on GaN Prepared by Lateral Epitaxial Overgrowth”, IEEE  Trans. Elect. Dev., 60, 3753-9 (2013).   SCI, {cited: 4}    

248.  T.Y.  Wu, C.C. Chang, K.K. Tiong, Y.C. Lee, S.Y. Hu, L.Y. Lin, T.Y. Lin, Z.C. Feng,  “Luminescence studies in InxGa1-xN epitaxial layers  with different indium contents”, Optical Materials 35, 1829-33 (2013).    SCI,  

247.  Wei  Liu, Li-Hong Zhu, Fan-Ming Zeng, Ling Zhang, Wei-Cui Liu, Xiao-Ying Li,  Bao-Lin Liu, and Zhe-Chuan Feng, “Influence of GaN Barrier Thickness on  Optical Properties of In-Graded InGaN/GaN Multiple Quantum Wells”, Applied  Physics Express 6, 081001 (2013).  SCI,  {cited: 5}    

246.  T.  Yu, C.G. Jin, H.Y. Zhang, L.J. Zhuge, Z.F. Wu, X.M. Wu, Z.C. Feng, “Effect of  Ta incorporation on the microstructure, electrical and optical properties of  Hf1-xTaxO high-k film prepared by dual ion beam  sputtering deposition”, Vacuum 92, 58-64 (2013).   { SCI, ited:7}  

245.  C.G.  Jin, T. Yu, Y. Yang, Z.F. Wu, L.J. Zhuge, X.M. Wu, Z.C. Feng, “Ferromagnetic  and photoluminescence properties of Cu-doped ZnO nanorods by radio frequency  magnetron sputtering”, Mat. Chem. Phys. 139, 506-510 (2013).  {cited:10}   SCI,  

244.  Devki  N. Talwar, Zhe Chuan Feng, Jyh-Fu Lee, Petre Becla, “Structural and dynamical  properties of Bridgeman grown CdSexTe1-x (0 < x ≤  0.35) ternary alloys”, Phys. Rev. B. 87, 165208 (12pp) (2013). {cited:14}  SCI,    

243.  Devki  N. Talwar, T. R. Yang, Hao-Hsiung, Zhe Chuan Feng, “Infrared  reflectivity spectra of gas-source molecular beam epitaxy grown dilute InNxAs1-x/InP(001)”,  Appl. Phys. Lett. 102,  052110 (2013).      SCI,{Cited: 1}  

242.  Z.C.  Feng, L.H. Zhu, T.W. Kuo, C.Y. Wu, H.L. Tsai, B.L. Liu, and J.R. Yang, “Optical and structural studies of dual wavelength  InGaN/GaN tunnel-injection light emitting diodes grown by metalorganic  chemical vapor deposition”, Thin Solid Films, 529, 269-274 (2013). {cited:11}  SCI

241. Huang, Jow-Lay; Ting, Jyh-Ming;  Jang-Hsing Hsieh, Zhe Chuan Feng, Jinn P. Chu, Hyung-Ho Park, Chuan-Pu Liu.  Eiji Kusano, Preface (TACT2011 International Thin Films Conference, Special  Issue), Thin Solid Films 529, (2013). {SCI}

2012: (13)

240.  Zhe  Chuan Feng, “Brief history review of research/development and  basic/interdisciplinary characterization on ZnO”, in Handbook of Zinc  Oxides and Related Materials: Volume 1) Materials, CRC press, Taylor  & Francis Group, London/New York, www.crcpress.com, Ch. 1, pp. 3-36, (2012).                

239.  Qiang  Xu, Hua Yang Sun, Cheng Chen, Ling-Yun Jang, RUSLI, Suwan P. Mendis, Chin Che  Tin, Zhi Ren Qiu, Zhengyun Wu, Chee Wee Liu, and Zhe Chuan Feng, “4H-SiC  wafers studied by X-ray absorption and Raman scattering”, Materials Science  Forum 717-720, 509-512 (2012). EI    {cited: 2}  

238.  Zhe  Chuan Feng, Cheng Chen, Qiang Xu, Suwan P. Mendis,  Ling-Yun Jang, Chin-Che Tin, Kung-Yen Lee, Chee Wee Liu, Zhengyun Wu, and Zhi  Ren Qiu, “Raman scattering and X-ray absorption from CVD grown 3C-SiC on Si”,  Materials Science Forum 717-720, 505-508 (2012). EI   {cited:  1}  

237.  Devki  N. Talwar, Zhe Chuan Feng,  Chee Wee Liu and Chin-Che Tin,  “Influence of surface roughness and interfacial layer on the infrared spectra  of V-CVD grown 3C-SiC/Si (100) epilayers”, Semicond. Sci. Technol. 27,  115019 (13pp) (2012). {cited: 9}    

236.  Lei  Liu,Lei Wang,Ningyang Liu,Wei  Yang,Ding Li,Weihua Chen,Zhe  Chuan Feng, Yueh-Chien Lee, Ian Ferguson, and Xiaodong Hu, “Investigation of  the light emission properties and carrier dynamics in dual-wavelength  InGaN/GaN multiple-quantum well light emitting diodes”, J. Appl. Phys. 112,  083101(2012). {cited:14}  SCI,                                

235.  H.C. Hsu, G.M. Hsu, Y.S. Lai, Z.C. Feng, A.  Lundskog, U. Forsberg, E. Janzén, K.H. Chen, L.C. Chen, ''Polarized and diameter-dependent Raman scattering from  individual AlN nanowires: the antenna and cavity effects'', Appl. Phys. Lett.  101, 121902 (2012). { SCI, cited:16},  

234.  Chen-Jun  Wu, Zhe Chuan Feng, Wen-Ming Chang, Chih-Chung Yang, and Hao-Hsiung Lin,  “Bond lengths and lattice structure of InP0.52Sb0.48  grown on GaAs”, Appl. Phys. Lett. 101, 091902 (2012).   {  SCI, ited:7}  

233.  C.  R. Ding, Z. L. Li, Z. R. Qiu, Z. C. Feng, and P. Becla, “Observation of  In-related collective spontaneous emission (superfluorescence) in Cd0.8Zn0.2Te:In  crystal”, Appl. Phys. Lett. 101,  091115 (SCI, 2012).   {cited: 8}  

232.  S.  Y. Hu, Y. C. Lee, Z. C. Feng and Y. H. Weng, “Raman spectra investigation of  InAlGaN quaternary alloys grown by metalorganic chemical vapor deposition”,  J. Appl. Phys. 112, 063111 (2012). { SCI, ited:10},  

231.  Lei  Liu, LeiWang, Cimang Lu, Ding Li, Ningyang Liu, Lei Li,·Wei Yang, Wenyu  Cao,·Weihua Chen,·Weimin Du, Xiaodong Hu, Zhe Chuan Feng, Wei Huang,  Yueh-Chien Lee, “Enhancement of light-emission efficiency of ultraviolet  InGaN/GaN multiple quantum well light emitting diode with InGaN underlying  layer”, Appl. Phys. A108,771-6 (2012).{cited:5}    

230.  Devki  N. Talwar, Zhe Chuan Feng and Tzuen-Rong Yang, “Vibrational signatures of  isotopic impurities and complexes in II-VI compound semiconductors”, Phys.  Rev. B85, 195203 (2012).    { SCI, cited:9}  

229.  Sin-Liang Ou, Dong-Sing Wuu, Yu-Chuan Fu, Shu-Ping Liu, Ray-Hua  Horng, Lei Liu, Zhe-Chuan Feng, “Growth and etching characteristics of  gallium oxide thin films by pulsed laser deposition”, Mat. Chem. Phys. 133,700-5  (2012). {cited:32}

228.  S.Y.  Hu, Y.C. Lee, Z.C. Feng, S.H. Yang, “Investigation of defect-related optical  properties in AlxInyGa1-x-yN quaternary alloys  with different Al/In ratios”, Journal of Luminescence 132, 1037–1040  (2012).          { SCI, cited:7}  

2011: (14)

227.  Ting-Wei  Kuo, Lingmin Kong, Zhe Chuan Feng, Wei Liu, Soo Jin Chua, Y.-S. Huang,  and Dong-Sing Wuu, “Luminescence Properties of InGaN/GaN Multiple Quantum  Well Light Emitting Diodes by Metalorganic Chemical Vapor Deposition”,  Advanced Materials Research 306-7, 1133-7 (2011). EI  

226.  Yu-Li  Tu, Yan-Hao Huang, Lingmin Kong, Kung-Yen Lee, Ling-Yun Jang, Chin-Che Tin,  Chee-Wee Liuand Zhe Chuan Feng, “Synchrotron Radiation  X-ray Absorption and Optical Studies of Cubic SiC Films Grown on Si by  Chemical Vapor Deposition”, Advanced Materials Research 306-7, 167-170  (2011). EI  

225.  Z.  S. Lee, L. M. Kong,Z. C. Feng, A. G. Li,   H. L. Tsai and J. R. Yang, “Luminescence dynamics and structural  investigation of InGaN/GaN multiple quantum well light emitting diodes”,  Advanced Materials Research 216, 445-9 (2011).EI  

224.  Dongsheng  Peng, Ke Jin, Ruisheng Zheng, Lei Liu and Zhe Chuan Feng, “Comparative  Study of GaN-Based LED Grown on Different Substrates”, Advanced Materials  Research 194-196, 2241-4 (2011). EI   {cited: 1}    {cited: 1}  

223.  Z.  S. Lee, L. M. Kong,Z. C. Feng, A. G. Li,   H. L. Tsai and J. R. Yang, “Luminescence dynamics and structural  investigation of InGaN/GaN multiple quantum well light emitting diodes”,  Advanced Materials Research 216, 445-9 (2011). {EI, cited:1}    

222.  Devki  N Talwar, Tzuen-Rong Yang, Zhe Chuan Feng and P. Becla, “Infrared  reflectance and transmission spectra in II-VI alloys and superlattices”,  Physical Review B 84, 174203_1-11  (2011).         { SCI, cited:20}  

221.  F.  Cheng, Tao Fa, Shude Yao, Chen-Jun Wu, Hao-Hsiung Lin, Zhe Chuan Feng,  “Tetragonal distortion of InAsPSb film grown on InAs substrate studied by  Rutherford backscattering/channeling and synchrotron X-ray diffraction”,  Physica B 406,3219-21 (2011).      { SCI, cited:3}  

220.  Yee  Ling Chung, Xingyu Peng, Ying Chieh Liao, Shude Yao, Li Chyong Chen, Kuei  Hsien Chen, and Zhe Chuan Feng, “Raman scattering and Rutherford  backscattering studies on InN films grown by plasma-assisted molecular beam  epitaxy”, Thin Solid Films, 519, 6778–6782 (2011). SCI,   {cited:  2}  

219. Ding Bin-Beng, Pan Feng, Feng  Zhe-Chuan, Fa Tao, Cheng Feng-Feng and Yao Shu-De, Structural Analysis of InxGa1-xN/GaN  MQWs by Different Experimental Methods, Chinese Phys. Lett. 28, 078201  (2011).     SCI,  {cited: 2}

218.  Lianshan  Wang, Zhiqin Lu, Sheng Liu, and Zhe Chuan Feng, “Shallow–Deep InGaN  Multiple-Quantum-Well System for Dual-Wavelength Emission Grown on Semipolar  (112) Facet GaN”, J. Electronic Mat. 40, 1572-7 (2011).  { SCI, cited:8}  

217.  Lei  Liu, Lei Wang, Ding Li, Ningyang Liu, Lei Li, Wenyu Cao, Wei Yang, Chenghao  Wan, Weihua Chen, Xiaodong Hu, and Zhe Chuan Feng, “Influence of  Indium Composition in the Prestrained InGaN Interlayer on the Strain  Relaxation of InGaN/GaN Multiple Quantum Wells in Laser Diode Structures”, J.  Appl. Phys. 109, 073106-1-5 (2011). { SCI, cited:29}    

216.  Tzuen-Rong  Yang, Sheng-Hong Jhang, Yen-Hao Shih, Wan-Ni Cheng, Fu-Chung Hou, Yu-Chang  Yang, P. Becla, Der-Chi Tien, and Zhe-Chuan Feng, “Study of Optical and  Transport Properties of Cd1-xZnxTe and CdSexTe1-xby Far-IR Reflectance Spectra”, Chinese Journal of Physics 49,  239-249 (SCI, 2011).      {cited: 1}  

215.  S.Y.  Hu, Y.C. Lee, Z.C. Feng and S.H. Yang, “Anomalous luminescence  behavior in the InAlGaN thin film”, J. Alloy and Compounds 509, 2300-3  (2011).  {  SCI, cited:7}                                                                                          

214. C.C. Wu, D.S. Wuu, P.R. Lin,  T.N. Chen, R.H. Horng, S.L. Ou, Y.L. Tu, C.C.Wei, Z.C. Feng, Characterization  of MgxZn1xO thin films grown on sapphire substrates by  metalorganic chemical vapor deposition,Thin Solid Films 519, 1966-70  (2011). { SCI,  cited:12}

2010: (10)

213.   Tsung  Han Wu, Z.C. Feng, Fangfei Li, Chung Cherng Lin, Ian Ferguson, Ray-Hua  Horng and Weijie Lu, “Brillouin scattering studies of gallium nitride and  Indium gallium nitride”,  ICORS 2010, AIP Conf. Proc. 1267,  1141-2 (2010).  

212.   Chih  Cheng Wei, Yu Li Tu, Z.C. Feng, Chia Cheng Wu, Po Rung Lin and Dong  Sing Wuu, “Resonant Raman scattering of MgZnO thin films grown on sapphire by  MOCVD”, ICORS 2010, AIP Conf. Proc. 1267, 1115-1116 (2010).   {cited: 1}  

211.  J.  Britten, Z.C. Feng & Gu Xu, “Magnified Hard X-ray Image in One  dimension”, Appl. Phys. Lett. 96, 261907 (2010). SCI,    {cited:4}      

210.  Jinliang  Ding, Yaochuan Wang, Hui Zhou, Qiang Chen, Shixiong Qian, and Zhe Chuan  Feng, “Nonlinear optical properties and ultrafast dynamics of undoped and  doped bulk SiC”, Ch. Phys. Lett. 27, 124202-1-4 (2010).   { SCI, cited:11}  

209.  W.  Yang, Z. Wu, Z. Liu, A. Pang, Y.L. Tu & Z.C. Feng, “Room  Temperature Deposition of Al-Doped ZnO Films on Quartz Substrates by  Radio-Frequency Magnetron Sputtering and Effects of Thermal Annealing”,Thin  Solid Films 519, 31-36 (2010).   {cited:84}        

208.  Y.L.  Wu,Z.C. Feng, J.F. Lee, W. Tong, B.K. Wagner, I. Ferguson  & W. Lu, “X-ray absorption and Raman study of GaN films grown on  different substrates by different techniques”, Thin Solid Films 518,  7475-9 (2010).  { SCI,, cited:8}      

207.  Z.C.  Feng, C.C. Wei, A.T.S. Wee, A. Rohatgi, W. Lu, “Effects of CdCl2  Treatment and Annealing on CdS/SnO2/Glass Heterostructures for Solar Cells”,  Thin Solid Films 518, 7199-7203 (2010).   { SCI, cited:5}  

206.  Cheng-Tzu  Kuo,, John C. Angus, Jinn P. Chu, Zhe-Chun Feng, Jia-Hong Huang,  Jang Hsing Hsieh, Thin Solid Films 518, 7183-4 Taiwan Association for  Coatings and Thin Films Technology (TACT 2009) Preface (2010).   { SCI}  

205.  C.L.  Hsiao, J.T. Chen, H.C. Hsu, Y.C. Liao, P.H. Tseng, Y.T. Chen, Z.C. Feng,  L.W. Tu, M.M.C. Chou, L.C. Chen & Kuei-Hsien Chen, “m-plane  (10-10) InN heteroepitaxied on (100)-g-LiAlO2 substrate: Growth orientation control and  characterization of structural and optical anisotropy”, J. Appl. Phys. 107,  073502 (7pp) (2010).  { SCI, cited:11}  

204.  S.Y.  Huang, R.H. Horng, Y.J. Tsai, P.R. Lin, W.K. Wang, Z.C. Feng &  D.S. Wuu, “Influence of hydrogen implantation concentration on the  characteristics of GaN-based resonant-cavity LEDs”, Semicond. Sci. Technol. 25,  035013 (2010).SCI    

2009: (8)

203.   Y.L.  Wu, Y.T. Chen, Z.C. Feng, J.F. Lee, P. Becla & W. Lu, “Synchrotron  Radiation X-ray Absorption Fine-structure and Raman Studies on CdZnTe Ternary  Alloys”, SPIE 7449, 74490Q1-11 (2009).    {cited:3}    

202.  J.  Chen, S.C. Y.C. Shin, Z.C. Feng, C.H. Kuan, J.H. Zhao, W.J. Lu,Occurrence of Polytype Transformation during  Nitrogen Doping of SiC Bulk Wafer ”, Materials  Science Forum 600-603, 39-42 (2009). {EI, cited: 5}  

201.  S.J.  Wang, N. Li, H.B. Yu, Z.C. Feng, H.L. Tsai, J.R. Yang, A. Valencia, J.  Nause & I. Ferguson, “Metalorganic chemical vapor deposition of GaN  layers on ZnO substrates using a-Al2O3  as a transition layer”, J. Phys. D: Appl. Phys. 42, 245302(2009).  {SCI, cited: 1}  

200.  N.  Li, S.J. Wang, E.H. Park, Z.C. Feng, H.L. Tsai, J.R. Yang, A.  Valencia, J. Nause & I. Ferguson, “Suppression of Phase Separation in  InGaN layers Grown on Lattice Matched ZnO Substrates”, J. Crystal Growth 311,  4628-31 (2009).  {SCI,cited: 17}  

199.  Y.C.  Lee, S.Y. Hu, Z.C. Feng, C.S. Yang & C.C. Huang,  “Temperature-Dependent Excitonic Luminescence in ZnO Thin Film Grown by Metal  Organic Chemical Vapor Deposition”, Jpn. J. Appl. Phys. 48, 112302  (2009). {SCI, cited: 7}  

198.  Y.C.  Lee, S.Y. Hu, W. Water, K.K. Tiong, Z.C. Feng, Y.T. Chen, J.C. Huang,  J.W. Lee, C.C. Huang, J.L. Shen and M.H. Cheng, “Rapid thermal annealing  effects on the structural and optical properties of ZnO films deposited on Si  substrates”, J. Lumin. 129, 148-152 (2009). {SCI, cited: 92}  

197.  L.  Kong, Z.C. Feng, Z.Y. Wu & W. Lu, “Temperature dependent and  time-resolved photoluminescence studies of InAs self-assembled quantum dots  with InGaAs strain reducing layer structure”, J. Appl. Phys. 106,  013512 (2009). {SCI, cited: 23}  

196.  H.C.  Lin, Z.C. Feng, M.S. Chen, Z.X. Shen, I.T. Ferguson & W. Lu,  “Raman Scattering Study on Anisotropic Property of Wurtzite GaN”, J. Appl.  Phys. 105, 036102 (2009).{SCI,  cited: 22}  

2008: (10)

195.  Z.C.  Feng, J.R. Yang, A.G. Li & I.T. Ferguson, “Structural and  optical properties of InGaN/GaN multiple quantum well light emitting diodes  grown by metalorganic chemical vapor deposition”, in book <<III-Nitride  Devices and Nanoengineering>>, Chapter 3, pp.57-88, Imperial  College Press, London, UK (2008).     {cited: 1}  

194. N Li, SJ Wang, EH Park, ZC Feng, HL Tsai, JR Yang,  A Valencia, J Nause, Influence of high indium composition  InGaN on lattice matched ZnO sacrificial substrates, Journal of Light & Visual  Environment 32 (2), 143-147 (2008).  {cited: 1}

193.  S.J.  Wang, N. Li, E.-H. Park, Z.C. Feng, A. Valencia, J. Nause, M. Kane, C.  Summers & I. Ferguson“MOCVD growth of GaN-based materials on  ZnO Substrates”, Phys. Stat. Sol (c) 5, 1736-9 (2008).  {cited: 8}  

192.  Z.C.  Feng, C. Tran, I.T. Ferguson & J.H. Zhao, “Material Properties  of GaN Films Grown on SiC/SOI Substrate”, Materials Science Forum, 600-601,  1313-6 (2008).  

191.  J.  Chen, S.C. Lien, Y.C. Shin, Z.C. Feng, C.H. Kuan, J.H. Zhao & W.  Lu, “Occurrence of Polytype Transformation during Nitrogen Doping of SiC Bulk  Wafer” , Materials Science Forum, 600-601, 39-42 (2008).  

190.  N.  Li, S.J. Wang, C.L. Huang, Z.C. Feng, A. Valencia, J. Nause, C.  Summers & I. Ferguson, “Effect of an Al2O3  transition layer on InGaN on ZnO substrates by organometallic vapor phase  deposition”, J. Crystal Growth 310, 4908-12 (2008).{cited:8}  

189.  L.M.  Kong, Z.C. Feng, Z.Y. Wu & W. Lu, “Emission dynamics of InAs  self-assembled quantum dots with different cap layer structures”,  Semiconductor Sci. & Technol., 23, 075044-8 (2008). {cited: 14}  

188.  S.  Sun, G.S. Tompa, C. Rice, X.W. Sun, Z.S. Lee, S.C.  Lien, C.W. Huang, L.C. Cheng & Z.C. Feng, “Metal organic  chemical vapor deposition and investigation of ZnO thin films grown on  sapphire”, Thin Solid Films, 516, 5572-5277 (2008). {cited: 18}  

187.  Z.C.  Feng, F.C. Hou, J.B. Webb, Z.X. Shen, E. Rusli, I.T. Ferguson &  W. Lu, “Optical Investigation of GaSb Thin Films Grown on GaAs by  Metalorganic Magnetron Sputtering”, Thin Solid Films, 516, no.16,  5493-5497 (2008).  {cited:8}  

186.  Z.C.  Feng, S.C. Lien, J.H. Zhao, X.W. Sun& W. Lu,  “Structural and Optical Studies on Ion-implanted 6H-SiC Thin Films”, Thin  Solid Films, 516, 5217-5226 (2008).  {cited: 17}  

2007: (4)

185.  S.J.  Wang, Nola Li, E.H. Park, Z.C. Feng, A. Valencia, J. Nause & I. T.  Ferguson, “Metalorganic Chemical Vapor Deposition of InGaN Layers on ZnO  Substrates”, J. Appl. Phys. 102, 106105 (2007). {cited: 24}                      

184.  L.M.  Kong, Z.Y. Wu, Z.C. Feng & I.T. Ferguson, “ Photoluminescence  Characteristics of InAs self-assembled Quantum dots in InGaAs/GaAs Quantum  well”, J. Appl. Phys. 101, 126101 (2007). {cited:  18}                                        

183.  H.L.  Tsai, T.Y. Wang, J.R. Yang, C.C. Chuo, J.T. Hsu, Z.C. Feng & M.  Shiojiri, “Observation of V Defects in Multiple InGaN/GaN Quantum Well  Layers”, Materials Transactions, 48, No. 5, 894-8 (2007). {cited:  15}                        

182.  K.Y.  Lo, Y.J. Huang, J.Y. Huang, Z.C. Feng, W.E. Fenwick, M. Pan & I.T.  Ferguson, “Reflective Second Harmonic Generation from ZnO thin films: A study  on the Zn-O bonding”, Appl. Phys. Lett. 90, 161904 (2007). {cited: 19}        

2006: (19)

181.  Z.C.  Feng, C.W. Huang, W.Y. Chang, J. Zhao, C.C. Tin, W. Lu & W.E.  Collins, “Infrared Reflectance Study of 3C-SiC Grown on Si by Chemical Vapor  Deposition”, Mat. Sci. Forum 527-529, 695-8 (2006).    {cited: 4}    

180.  Z.C.  Feng, J.W. Yu, J.B. Wang, R. Varatharajan, B. Nemeth, J. Nause,I. Ferguson, W. Lu & W.E. Collins, “Optical Characterization of ZnO  Materials Grown by Modified Melt Growth Technique”, Mat. Sci. Forum 527-529,  1567-70 (2006). {cited:1}    

179.  H.C.  Lin, Z.C. Feng, M.S. Chen, Z.X. Shen, W. Lu & W.E. Collins,  “Anisotropic Properties of GaN Studied by Raman Scattering”, Mat. Sci. Forum 527-529,  1517-20  (2006).                

178.  Z.C.  Feng, A.T.S. Wee & S.Y. Hung, “Properties of the CdTe/InSb  Interface Studied by Optical and Surface Analytical Techniques”, Phys. Stat.  Sol. (a) 203, 2181-5 (2006). {cited:  1}  

177.  Z.C.  Feng, J.H. Chen, A.G Li & L.C. Chen, “Optical Spectroscopic  Investigation of InGaN/GaN Multiple Quantum Well Light Emitting Diode wafer  Grown on Sapphire by Metalorganic chemical Vapor deposition”, invited paper,  J. Physics: Conf. Ser. 28, 42-47 (2006).  

176.  L.M.  Kong, J.F. Cai, Z.Y. Wu, Z. Gong, Z.C. Niu & Z.C. Feng,  “Time-resolved Photoluminescence Spectra of Self-assembled InAs/GaAs Quantum  Dots”, Thin Solid Films 498, 188-192 (2006). {cited: 31}  

175.  J.  Zhao, J. Chen, Z.C. Feng, J.L. Chen, R. Liu & G. Xu, “Band-gap  Blue Shift of InGaAs/InP Multiple Quantum Wells by Different Dielectric Film  Coating and Annealing”, Thin Solid Films 498, 179-182 (2006). {cited: 12}  

174.  Z.C.  Feng,  H.C. Lin, J. Zhao, T.R. Yang & I. Ferguson, “Surface and optical  properties of AlGaInP Films Grown on GaAs by Metalorganic Chemical Vapor  Deposition”, Thin Solid Films 498, 167-173 (2006). {cited: 9}  

173.  T.R.  Yang, J.B. Wang & Z.C. Feng, “Optical and Transport Properties of  InSb Thin Films Grown on GaAs by Metalorganic Chemical Vapor Deposition”,  Thin Solid Films 498, 158-162 (2006).  {cited: 8}  

172.  J.H.  Chen, Z.C. Feng, H.L. Tsai, J.R. Yang, P. Li, C. Wetzel, T. Detchprohm  & J. Nelson, “Optical and structural properties of InGaN/GaN multiple  quantum well structure grown by metalorganic chemical vapor deposition”, Thin  Solid Films 498, 123-127 (2006). {cited:  32}  

171.  Z.C.  Feng, W. Liu, S.J. Chua, J.W. Yu, C.C. Yang, T.R. Yang & J. Zhao,  “Photoluminescence characteristics of low indium composition InGaN thin films  grown on sapphire by metalorganic chemical vapor deposition”, Thin Solid  Films 498, 118-122 (2006). {cited:  13}  

170.  J.W.  Yu, H.C. Lin, Z.C. Feng, L.S. Wang, S.J. Chua, “Control and  Improvement of Crystalline Cracking from GaN Thin films grown on Si by  Metal-organic Chemical Vapor Deposition”, Thin Solid Films 498,  108-112 (2006). {cited: 12}  

169.  Z.C.  Feng, J.W. Yu, J. Zhao, T.R. Yang, R.P.G. Karunasiri, W. Lu &  W.E. Collins, “Optical and materials properties of Sandwiched Si/SiGe/Si  Heterostructures”, Surface and Coating Technology 200, 3265-9  (2006).  {cited: 2}  

168.  Z.C.  Feng, J.W. Yu, K. Li, Y.P. Feng, K.R. Padmanabhan & T.R. Yang,  “Combined optical, surface and nuclear microscopic assessment of porous  silicon formed in HF-acetonitrile”, Surf. Coat. Technol. 200, 3254-60  (2006). {cited: 6}  

167.  J.  Zhao, Z.C. Feng,Y.C. Wang, J.C. Deng & G. Xu,  “Luminescent Characteristics of InGaAsP/InP Multiple Quantum Well Structures  by Impurity-Free Vacancy Disordering”, Surf. Coat. Technol. 200,  3245-3249 (2006). {cited: 10}  

166.  W.  Tong, M. Harris, B.K. Wagner, J.W.Yu, H.C. Lin, Z.C. Feng, “Pulse  Source Injection Molecular Beam Epitaxy and Characterization of Nano-scale  Thin GaN Layers on Si substrates”,Surf.  Coat. Technol. 200, 3230-4 (2006).  {cited: 5}  

165.  Z.C.  Feng, K. Li, Y.T. Hou, J. Zhao, W. Lu & W.E. Collins, “A  comparative study of high resolution transmission electron microscopy, atomic  force microscopy and infrared  spectroscopy for GaN thin films grown on  sapphire by metalorganic chemical vapor deposition”, Surface and Coating  Technology 200, 3224-3229 (2006). {cited:3}  

164.  J.H.  Chen, Z.C. Feng, J.C. Wang, H.L. Tsai, J.R. Yang, A.  Parekh, E. Armour, P. Faniano, “Study of carrier localization in InGaN/GaN  quantum well blue light emitting diode structures”, J. Crystal Growth 287,  354-358 (2006). {cited: 32}  

163.  Z.C.  Feng, “Optical Properties of Cubic SiC Grown on Si substrate by  Chemical Vapor Deposition”, Microelectronic Engineering 83, 165-169  (2006). {cited: 20}  

2005: (4)

162.  Z.C.  Feng, J.W. Yu, W.Y. Chang and J. Li, “Photoluminescence Spectral  Features of CdTe on InSb Grown by Molecular Beam Epitaxy”, Journal of Taiwan  Vacuum Society, Vol. 18, no. 3, p.55-58 (2005).  

161.  W.  Tong, M. Harris, B.K. Wagner, J.W. Yu, H.C. Lin and Z.C. Feng, “Pulse  Source Injection Molecular Beam Epitaxy and Characterization of Nano-scale  Thin GaN Layers on Si substrates”, Journal of Taiwan Vacuum Society, Vol. 18,100-104(2005).  

160.  Z.C.  Feng, Y.J. Sun, L.S. Tan, S.J. Chua, J.W. Yu, J.H. Chen, C.C. Yang,  W. Lu & W.E. Collins, “P-type doping in GaN through Be implantation”,  Phys. Stat. Solidi (c), 2, 2415-2419  (2005).                                        

159.  Z.C. Feng, W. Liu, S.J. Chua, J.H.  Chen, C.C. Yang, W. Lu & W.E. Collins, “Recombination Mechanism of InGaN  Multiple Quantum Wells Grown by Metalorganic Chemical Vapor Deposition”,  Phys. Stat. Solidi (c), 2, 2377-2380 (2005). {cited: 2}

2004-03: (10)

158.   Z.C.  Feng, “Second order Raman scattering of cubic silicon carbide”,  Science Access 2 (1), 242-243 (2004).Proceedings of the XIXth International Conference on Raman  Spectroscopy.  {cited: 3}  

157.  S.  Ganesan, Z.C. Feng, D. Mehta, M.H. Kane, I. Ferguson, J. Nause, B. Wagner  & C. Summers, Optical properties of bulk and epitaxial  ZnO, MRS MRS Symp. Proc. Vol. 799, Progress in Compound  Semiconductor Materials III-Electronic and Optoelectronic Applications,  Z8.10.1-6 (2004).  {cited: 3}  

156.  K.  Li, Z.C. Feng, C.C. Yang & J. Lin, “Surface Chemical Status of  Heteroepitaxial Nitride Films on Sapphire by Metalorganic Chemical Vapor  Deposition”, International Journal of Nanoscience, 3, Nos. 4-5,  655-661 (2004). {cited: 2}    

155.D.N. Talwar and Z.C. Feng, Understanding  spectroscopic phonon-assisted defect features in CVD grown 3C-SiC/Si(100) by  modeling and simulation, Computational Materials Science  30, 419-424 (2004). {cited:  14}  

154.  Z.C.  Feng, J.H. Chen, J. Zhao, T.R. Yang & A. Erbil, “Raman  scattering of ferroelectric lead lanthanum titanate thin films grown on fused  quartz by metalorganic chemical vapor deposition”, Ceramics International 30,  1561-64 (2004).{cited: 4}  

153.  Y.C.  Cheng, C.M. Wu, H.S. Chen, C.C. Yang, Z.C. Feng, G. A. Li, J.R. Yang,  A. Rosenauer & K.J. Ma, “Improvements of InGaN/GaN quantum-well  interfaces and radiative efficiency with InN interfacial layers”, Appl. Phys.  Lett. 84, 5422-5424 (2004). {cited:  19}  

152.  Z.C.  Feng, “Optical and Interdisciplinary Analysis of Cubic SiC Grown on  Si by Chemical Vapor Deposition”, book chapter in SiC Power Materials –  Devices and Applications, Ed. Zhe Chuan FENG, Springer,  Berlin, pp.209-276, (2004).    {cited:  1}  

151. T.R. Yang, M.M.  Dvoynenko, Z.C. Feng and H.H. Cheng, “Raman spectroscopy of  self-assembled Ge islands on Si”, Europe Phys. J. B 31, 41-45 (2003). {cited: 7}  

150.  H.  Kang, Z.C. Feng & I. Ferguson, “Study on AlGaN and nucleation  layers with X-Ray diffraction”, MRS Symp. Proc. Vol. 798, GaN and  Related Alloys, Eds. H. M. Ng, M. Wraback, K. Hiramatsu and N. Grandjean,  Y5.71, p.335-340 (2003).  {cited: 2}  

149.  H.  Kang, N. Spencer, D. Nicol, Z.C. Feng, I. Ferguson, S.P. Guo, M.  Pophristic & B. Peres, “X-Ray diffraction analysis of GaN and AlGaN”, MRS  Symp. Proc. Vol. 743, GaN and Related Alloys, eds. E.T. Yu, Y.  Arakawa, A. Rizzi & J. S. Speck, L6.12, p.405-410 (2003).  {cited: 5}  

2002: (10)

148.  Z.C.  Feng, D. Talwar and I. Ferguson, “Spectroscopic properties of cubic SiC on  Si”, MRS Symp. Proc. Vol. 742, Silicon Carbide – Materials, Processing and  Devices, eds. S.E. Saddow, N.S. Saks, D.J. Larkin & A. Schöner, Materials  Research Society, K2.14.1-6 (2002).   {cited: 1}  

147.  J.H.  Zhao, P. Alexandrov, L. Fursin, Z.C. Feng & M. Weiner, “High  performance 1500 V 4H-SiC junction barrier Schottky diodes”, Electronics  Lett. 38, 1389-90 (2002). {cited:  8}  

146.  T.R.  Yang, M.M. Dvoynenko, Y.F. Cheng & Z.C. Feng, “Far-IR  investigation of thin InGaN layers”, Physica B 324, 268-278 (2002). {cited: 8}  

145.  Z.C.  Feng, T.R. Yang, R. Liu & A.T.S. Wee, “Phase separation in  Zn-doped InGaN grown by metalorganic chemical vapor deposition”, Materials  Science in Semiconductor Processing 5, 39-43 (2002). {cited: 14}  

144.  Z.C.  Feng, “Micro-Raman scattering and micro-photoluminescence of GaN thin  films grown on sapphire by metalorganic chemical vapor deposition”, Optical  Engineering 41, 2022-2031 (2002). {cited:  30}  

143.  Z.C.  Feng, X. Zhang, S.J. Chua, T.R. Yang, J.C. Deng, G. Xu, “Optical and  structural properties of GaN materials and structures grown on Si by  metalorganic chemical vapor deposition”, Thin Solid Films 409, 15-22  (2002).  {cited: 24}  

142.  W. Chang,  Z.C. Feng, J. Lin, R. Liu, A.T.S. Wee, K. Tone & J.H. Zhao, “Infrared  reflection investigation of ion-implanted and post-implantation-annealed  epitaxially grown 6H-SiC”, Surf. & Interface Analysis 33, 500-5  (2002). {cited: 8}  

141.  Z.C.  Feng, F. Yan, W.Y. Chang, J.H. Zhao & J. Lin, “Optical  characterization of ion implanted 4H-SiC”, Mater. Sci. Forum 389-393,  647-650 (2002). {cited: 4}  

140.  W.Y.  Chang, Z.C. Feng, J. Lin, F. Yan & J.H. Zhao, “Surface and  interface properties of ion implanted 4H-SiC”, International Journal of  Modern Physics B 16, 151-158 (2002). {cited:  3}  

139.  Z.C.  Feng, T.R. Yang, R. Liu & A.T.S. Wee, “Crystalline phase  separation in InGaN layer materials prepared by metalorganic chemical vapor  deposition”, International Journal of Modern Physics B 16, 268-274  (2002). {cited: 1}  

2001: (11)

138.  Z.C.  Feng, W.Y. Chang, S.J. Chua, J.Lin,C.C.Tin,“Infrared Optical  Investigation of 3C-SiC on Si”, Proc. 25th Intern. Conf. Phys.  Semicond., Springer Proc. in Physics Vol. 87, p.1559-1560 (2001).{cited: 1}  

137.  Z.C.  Feng, T.R. Yang & Y.T. Hou, “Infrared reflectance analysis of  GaN epitaxial layers grown on sapphire and silicon substrates”, Materials  Science in Semiconductor Processing 16, 571-576 (2001). {cited: 18}  

136.  Z.C.  Feng, S.J. Chua, G.A. Evans, J.W. Steeds, K.P.J. Williams & G.D.  Pitt, “Micro-Raman and Photoluminescence Study on n-type 6H-SiC”, Materials  Science Forum 353-356, 345-348 (2001). {cited:  5}  

135.  W.  Chang, J. Lin, W. Zhou, S.J. Chua & Z.C. Feng, “Photoluminescence  and photoelectron spectroscopy analysis of InGaAsN grown by metalorganic  chemical vapor deposition”, Appl. Phys. Lett. 79, 4497-4499 (2001). {cited: 10}  

134.  Z.C.  Feng, W. Wang, S.J. Chua, P. Zhang, K.P.J. Williams & G.D. Pitt,  “Raman scattering properties of GaN materials and structures under visible  and ultraviolet excitations”, J. of Raman Spectroscopy, (invited paper) 32,  840-846 (2001). {cited: 36}  

133.  Y.P.  Guo, J.C. Zheng, A.T.S. Wee, C.H. Huan, K. Li, J.S. Pan, Z.C. Feng  & S.J. Chua, “Photoluminescence studies of SiC nanocrystals embedded in a  SiO2 matrix”, Chem. Phys. Lett. 339, 319-322 (2001). {cited: 83}  

132.  Y.  Wang, J. Lin, C.H. Huan, Z.C. Feng & S.J. Chua, “Post-growth rapid  thermal annealing effect on hydrogenated amorphous silicon carbide thin  film”, Diamond and Related Materials 10, 1268-1272 (2001). {cited: 3}  

131.  Y.  Wang, J. Lin, C.H. Huang, Z.C. Feng & S.J. Chua, “High temperature  annealing of hydrogenated amorphous silicon carbide thin films”, Thin Solid  Films 384, 173-176 (2001). {cited:  17}  

130.  X.  Zhang, Y.T. Hou, Z.C. Feng, & J.L. Chen, "Infrared  reflectance study of GaN films grown on Si(001) substrates", J. Appl.  Phys. 89, 6165-6170 (2001). {cited:  35}                

129.  G.  Xu, Z.C. Feng, Z. Popovic, J.Y. Lin & J.J. Vittal, “Nanotube  structure revealed by high resolution X-ray diffraction”, Advanced Materials,  13, 264-267 (2001). {cited: 15}      

128.  D.G.  Chtchekine, Z.C. Feng, S. J. Chua & G.D. Gilliland,  “Temperature-varied photoluminescence and magnetospectroscopy of  near-bandedge emissions in GaN”, Phys. Rev. B 63, 125211-125217  (2001). {cited: 23}  

127.  I.  Ferguson, A. G. Thompson, S. A. Barnett, F. H. Long & Z.C. Feng,  “Epitaxial Film Growth and Characterization”, a book chapter, in <<Thin  Films>> Vol. 28, <<Frontiers of Thin Film  Technology>>, pp. 1-69, ed. M. Francombe and C. E. C. Wood, Academic  Press, San Diego (2001).  

2000: (11)

126.   I.  Ferguson, A. G. Thompson, S. A. Barnett, F. H. Long & Z.C. Feng,  “Epitaxial Film Growth and Characterization”, a book chapter, in  <<Handbook of Thin Film Devices>> Vol. 1,  <<Hetero-Structures for High Performance Devices>>, ed. M.  Francombe, pp. 1-53, Academic Press, San Diego (2000). {cited: 2}        

125.   M.S.  Chen, Z.X. Shen, W.S. Li, Z.C. Feng & S.J. Chua, “Raman evidence  of valence band anisotropy of GaN film on sapphire substrate”, Proc. of  the XVIIthIntern. Conf. on Raman Spectroscopy, Wiley, p.564-565  (2000).  {cited: 1}  

124.   Z.C.  Feng, S.J. Chua, G.A. Evans, M. Kuball, K. Williams & D. Pitt,  “Multiple phonon resonance Raman scattering in epitaxial GaN materials”, Proc.  of the XVIIthIntern. Conf. On Raman Spectroscopy, Wiley,  p.592-593 (2000).  {cited: 1}  

123.   K.  Miller, J. Dunn, H.X. Zhang, M.O. Manasreh, Z.C. Feng & I.  Ferguson, “Optical absorption of doped and undoped bulk SiC”, in Silicon  Carbide-Materials, Processing, and Devices, Mat. Res. Soc. Symp. Proc. Vol. 640,  H5.23_1-6 (2000).  {cited: 3}  

122. K. Li, A.T.S. Wee, J. Lin, Z.C. Feng & S.J.  Chua, “X-ray photoelectron spectroscopy evaluation of surface chemical states  of GaN, InGaN and AlGaN heteroepitaxial thin films grown on sapphire by  MOCVD”, MRS Symp. Proc. Vol. 618, p.303-308 (2000). {cited: 4}    

121. Z.C. Feng, S.J. Chua,Z.X. Shen, K. Tone & J.H. Zhao,  “Microscopic probing of Raman scattering and photoluminescence on C-Al ion  co-implanted 6H-SiC”, Mat. Sci. Forum 338-342, 659-662 (2000).

120.G.  Xu & Z.C. Feng, “High order X-ray diffraction and internal atomic  layer roughness of epitaxial SiC thin films”, Mat. Sci. Forum 338-342,  501-504 (2000).  

119. Y.H. Wang, J. Lin, Z.C. Feng,  S.J. Chua & C.H. Huan, “Plasma enhanced chemical vapor deposition and  characterization of hydrogenated amorphous SiC films on Si”, Mat. Sci. Forum 338-342,  325-328 (2000). {cited: 4}

118. Y.T. Hou, Z.C. Feng, J. Chen, X.  Zhang, S.J. Chua & J.Y. Lin, "Correlation between the infrared  reflectance and microstructure of thin gallium nitride films grown on silicon  substrates", Solid State Commun. 115, 45-49 (2000). {cited: 9}

117. W.S. Li, Z.X. Shen, Z.C. Feng  & S.J. Chua, "Temperature dependence of Raman scattering in the  hexagonal gallium nitride", J. Appl. Phys. 87, 3332-3337 (2000). {cited: 118}

116. G. Xu and Z.C. Feng,  "Internal atomic distortion and layer roughness of epitaxial SiC thin  films studied by short wavelength x-ray diffraction", Phys. Rev. Lett. 84,  1926-1929 (2000). {cited: 2}

1999: (17)

115. F. Long, M. Pophristic, C. Tran, R.F.  Kalicek Jr, Z.C. Feng & I. Ferguson, “Time-resolved laser spectroscopy of  nitride semiconductors”, Materials Science & Engineering B59,  147-149 (1999).    {cited:  1}              

114.  X.  Zhang, S.J. Chua, Z.C. Feng, J. Chen, and J. Lin, "MOCVD growth  and characterization of GaN films with composite intermediate layer buffer on  Si substrate", Phys. Stat. Sol. (a) 176, 605-610 (1999). {cited: 9}  

113.  Z.C.  Feng, Y.T. Hou, M.F. Li, S.J. Chua, W. Wang, and L. Zhu,  "Infrared reflectance investigation of un-doped and Si-doped GaN films  on sapphire", Physica Status Solidi (b) 216, 577-580 (1999). {cited: 3}  

112.  K.  Li, A.T.S. Wee, J. Lin, Z.C. Feng & E.W.P. Lau,  "Compositional and morphological analysis of InxGa1-xN/GaN  epilayers", Surface & Interface Analysis 28, 181-185 (1999). {cited: 1}  

111.  W.S.  Li, Z.X. Shen, Z.C. Feng & S.J. Chua, "Raman scattering and  transverse effective charge of MOCVD-grown GaN films between 78 and 870  K", Surface & Interface Analysis 28, 173-176 (1999). {cited: 3}  

110.  Z.C.  Feng, Y.T. Hou, S.J. Chua & M.F. Li, "Infrared reflectance  studies of GaN epitaxial films on sapphire substrate", Surface &  Interface Analysis 28, 166-169 (1999). {cited:  6}  

109.  Y.T.  Hou, Z.C. Feng, M.F. Li & S.J. Chua, "Characterization of MBE  grown Ga1-xAlxAs  alloy films by Raman scattering", Surface & Interface Analysis 28,  163-165 (1999). {cited: 4}  

108.  W. Liu,  Z.C. Feng, M.F. Li, S.J. Chua, N. Akutsu & K. Matsumoto,  "Material properties of GaN grown by MOCVD", Surface &  Interface Analysis 28, 150-154 (1999). {cited:  2}  

107.  T.R.  Yang, C.C. Lu, W.C. Chou, Z.C. Feng & S.J. Chua, "Infrared  and Raman spectroscopic study of ZnMnSe materials grown by molecular beam  epitaxy", Phys. Rev. B 60, 16058-16064 (1999).{cited: 20}  

106.  D.G.  Chtchekine, Z.C. Feng, G.D. Gilliland, S.J. Chua & D. Wolford,  "A donor-hydrogen bound exciton in epitaxial GaN", Phys. Rev. B 60,  15980-15984 (1999). {cited: 11}  

105.  Y.T.  Hou, Z.C. Feng, S.J. Chua, M.F. Li, N. Akutsu & K. Matsumoto,  "Influence of Si-doping on the characteristics of GaN on sapphire by  infrared reflectance", Appl. Phys. Lett. 75, 3117-3119 (1999). {cited: 17}  

104.  G.  Li, S. J. Chua, J.H. Teng, W. Wang, Z.C. Feng, Y.H. Huang & T.  Osipowicz, "Blueshift of In0.2Ga0.8N/GaN single quantum well band gap energy by rapid thermal  annealing", J. Vac. Sci. Technol. B17, 1507-1511 (1999). {cited: 14}  

103.  Z.  C. Feng, S. J. Chua, K. Tone & J. H. Zhao, "Recrystallization  of C-Al Ion Co-implanted Epitaxial 6H-SiC", Appl. Phys. Lett. 75,  472-474 (1999). {cited: 16}  

102.  X.  Zhang, S. J. Chua, C. Poon, P. Li & Z.C. Feng, "Enhanced  optical emission from GaN films grown on a silicon substrate", Appl.  Phys. Lett. 74, 1984-1987 (1999). {cited:  36}  

101.  Z.C.  Feng, E. Armour, I. Ferguson, R.A. Stall, L. Malikova, T. Holden,  J.Z. Wan, F.H. Pollak & M. Pavlosky, "Non-destructive assessment of In0.5(Ga1-xAlx)0.5P films grown on GaAs  by low pressure metalorganic chemical vapore deposition", J. Appl. Phys.  85, 3824-3831 (1999). {cited: 10}  

100.  J.C.  Burton, L. Sun, F.H. Long, Z.C. Feng & I. Ferguson, "First-  and second-order Raman scattering from semi-insulating 4H-SiC", Phys. Rev.  B59, 7282-7284 (1999). {cited:  114}        

99.     Y.S. Huang, W.D. Sun, L. Malikova, F.H. Pollak, I. Ferguson, H.  Hou, Z.C. Feng, T. Ryuan & E.B. Fantner, "Room temperature  photoluminescence, contactless electroreflectance, and X-ray characterization  of a double-side-doped GaAlAs/InGaAs high electron mobility transistor  structure", Appl. Phys. Lett. 74, 1851-1853 (1999). {cited:9}  

1998: (11)

98.     D.G. Chtchekine, G.D. Gilliland, Z.C. Feng, S.J. Chua, D.  Wolford, S.E. Ralph, M. Schurman and I. Ferguson, “Temperature dependence  of bound exciton emissions in GaN”, in MRS J. Nitride Semicond. Res. 4S1, G6.47 (1999) and GaN  and Related Alloys, Mat. Res. Soc. Symp. Proc. Vol. 537, (1998). {cited:  6}

97.     I. Ferguson, M. Schurman, R. F. Karlicek, Z.C. Feng, S.  Liang, Y. Lu and C. Joseph, "Breakdown mechanisms in Al(GaN) MSM  photodetechtors", in Photodetectors: Materials and Devices III,  Proceedings of SPIE, Vol. 3287, p.221-226 (1998). {cited: 1}

96.     J.C. Burton, L. Sun, M. Pophristic, F.H. Long, Z.C. Feng  & I. Ferguson, “Spatial characterization of doped SiC wafers by Raman  spectroscopy”, J. Appl. Phys. 84, 6268-6273 (1998). {cited:  137}                            

95.     W. Shan, W.Walukiewicz, E.E Haller, B.D.Little, J.J.Song,  M.D.McCluskey, N.M.Johnson, Z.C.Feng,M.Schurman,R.A. Stall, “Optical  properties of InxGa1-xN grown by metalorganic chemical  vapor deposition”,J.Appl.Phys.84,4452-8(1998). {cited: 124}  

94.     M. Pophristic, F.H. Long, C.A. Tran, R.F. Karlicek, Z.C. Feng  & I. Ferguson, “Time-resolved spectroscopy of InxGa1-xN  multiple quantum wells at room temperature”, Appl. Phys. Lett.73,  815-817 (1998). {cited: 38}  

93.     I.T. Ferguson, C. Beckman, Z.C. Feng, A.G. Thompson, R. Stall,  H.Q. Hou, K. Seipel, S.W. Chen & L. Aina, “MOCVD growth of high power  0.5W 35GHz MMICs”, J. Crystal Growth 195, 648-654 (1998).   {cited: 3}  

92.     I. Ferguson, S. Liang, C. A. Tran, R. F. Karlicek, Z.C. Feng,  Y. Lu & C. Joseph, “An investigation of breakdown mechanisms in Al(GaN)  MSM photodetechtors”, Materials Science Forum 264-268, 1437-1440  (1998). {cited: 1}  

91.     Z.C. Feng, M. Schurman, C. Tran, T.  Salagaj, B. Karlicek, I. Ferguson, R.A. Stall, C.D. Dyer, K.P.J. Williams  & G.D. Pitt, “Photoluminescence and Raman Scattering characterization of GaN,  InGaN and AlGaN films using a UV Excitation Raman-Photoluminescence  microscope”, Materials Science Forum 264-268, 1359-1362 (1998). {cited: 6}

90.     Z.C. Feng, I. Ferguson, R.A. Stall,  K. Li, Y. Shi, H. Singh, K. Tone, J.H. Zhao, A.T.S. Wee, K.L. Tan, F. Adar  & B. Lenain, “Effects of Al-C ion-implantation and annealing in epitaxial  6H-SiC studied by structural and optical techniques”, Materials  Science Forum 264-268, 693-696 (1998). {cited:  3}  

89.     W. Shan, J.W. Ager III, W. Walukiewicz, E.E. Haller, B.D.  Little, J.J. Song, M. Schurman, Z.C. Feng, R.A. Stall & B.  Goldenberg, “Near-band-edge photoluminescence emission in AlxGa1-xN  under high pressure”, Appl. Phys. Lett. 72, 2274-2276 (1998). {cited: 19}  

88.     W. Krystek, F.H. Pollak, Z.C. Feng, M. Schurman &  R.A. Stall, “Determination of the carrier-type at III-nitride semiconductor  surfaces/interfaces using contactless electroreflectance”, Appl. Phys. Lett. 72,  1353-55 (1998). {cited: 28}  

1997: (10)

87.     I. Ferguson, C.A. Tran, R.F. Karlicek, Z.C. Feng, R.A.  Stall, S. Laing, W. Cai, Y. Li, Y. Liu & Y. Lu, “Growth of III-Nitrides  for photodetector applications”, in Photodetectors: Materials and Devices  II, Proc. SPIE, 2999, p.298-305 (1997).  {cited: 1}  

86.     K. Li, Z.C. Feng, A.T.S. Wee, H. C. Chou, J.Y. Lin, S. Kamra,  K.L. Tan, A. Rohatgi, L. Zhou, S. F. Y. Li, “Several efficiency influencing  factors in CdTe/CdS solar cells”, in Thin-Film Structures for Photovoltaics,  ed., E. Jones, J. Kalejs, R. Noufi & B. Sopori, MRS, Pittsburgh, Mat.  Res. Soc. Symp. Proc. 485, p.197-202 (1997).  {cited: 5}

85.     W. Krystek, F.H. Pollak, Z.C. Feng, M. Schurman, C. Tran &  R.A. Stall, “Nondestructive room temperature determination of the nature of  the band bending (carrier type) in III-nitrides using contactless  electroreflectance and surface photovoltage spectroscopy”, in Nitride  Semiconductors, Mat. Res. Soc. Symp. Proc. 482, p.573-578  (1997).  {cited: 5}  

84.     I. Ferguson, C. A. Tran, R. F. Karlicek Jr., Z.C. Feng,  R. Stall, S. Liang, Y. Lu & C. Joseph, “GaN and AlGaN  metal-semiconductor-metal photodetechtors”, Mat. Sci. & Engi. B50,  311-314 (1997). {cited: 47}

83.     W. Shan, J.J. Song, Z.C. Feng, M. Schurman & R.A.  Stall, “Pressure-dependent photoluminescence study of InxGa1-xN”,  Appl. Phys. Lett. 71, 2433-2435 (1997). {cited:  30}                                                                                                          

82.     L. Malikova, Y.-S. Huang, F.H. Pollak, Z.C.Feng, M.  Schurman, C.A. Tran, T. Salagaj & R.A. Stall, “Temperature dependence of  the energies and broadening parameters of the interband transitions in Ga0.95Al0.05N”,  Solid State Commun. 103, 273-278 (1997). {cited:  25}                                  

81.     K. Li, A.T.S. Wee, J. Lin, K.K. Lee, F. Watt, K.L. Tan, Z.C.  Feng & J.B. Webb, “Surface and interface analysis of InSb/GaAs”, Thin  Solid Films 302, 111-115 (1997). {cited:  1}  

80.     K. Li, A.T.S. Wee, J. Lin, K.L. Tan, L. Zhou, S.F.Y. Li, Z.C.  Feng, H.C. Chou, S. Kamra & A. Rohatgi, “A microstructural study on  the surfaceand interface of CdTe/CdS solar cells”,  J. Mat. Sci.: Materials in Electronics 8, 125-132 (1997). {cited: 20}  

79.     Z.C. Feng, M. Schurman & R.A.  Stall, “How to distinguish the Raman modes of epitaxial GaN with phonon  features from sapphire substrate”, J. Vac. Sci. Technol. A 15,  2428-2430 (1997). {cited: 11}  

78.     Z.C. Feng, M. Schurman, R.A. Stall,  M. Pavloski & A. Whitley, “Raman scattering as a characterization tool  for epitaxial GaN thin films grown on sapphire by turbo disk metalorganic  chemical vapor deposition”, Appl. Optics 36,2917-22(1997).{cited: 12}  

1996: (16)

77.     A. Rohatgi, H.C. Chou, N.M. Jokerst, E.W. Thomas, C. Ferekides,  S. Kamra, Z.C. Feng & K.M. Dugan, "Effects of CdTe growth  conditions and techniques on the efficiency limiting defects and mechanisms  in CdTe solar cells", AIP Conf. Proc.353, 368-375 (1996).  {cited: 8}  

76.     R. Hu, C.C. Tin, Z.C. Feng, J. Liu & Y. Vohra, “Raman  spectroscopy of CVD-grown 4H-SiC epilayers”, Silicon Carbide and Related Materials  1995, Institute of Physics Conference Series, Vol. 142, pp. 345-8 {cited: 13}  

75.     Z.C. Feng, C. Beckham, P. Schumaker,  I. Ferguson,R.A. Stall, N. Schumaker, M. Povloski,  A.Whitley, “Optical characterization and mapping of four inch InSb epitaxial  thin films grown on GaAs by turbo disk metalorganic chemical vapor  deposition” in Infrared Applications of Semiconductors-Materials,  Processing, and Devices, Mat. Res. Soc. Symp. Proc. 450, p.61-66  (1996). {cited: 1}  

74.     B.D. Little, W. Shan, J.J. Song, M. Schurman, Z.C. Feng  & R.A. Stall, “Optical studies of MOCVD InGaN alloys”, in III-V  Nitrides, Mat. Res. Soc. Symp. Proc. Vol. 449, edited by T.  Moustakes, I. Akasaki, B. Monemar and F. Ponce, MRS, Pittsburgh, p.823-828  (1996).  {cited: 4}  

73.     A.G. Thompson, M. Schurman, Z.C. Feng, R.F. Karlicek, T.  Salagaj, C.A. Tran, R.A.Stall, “The Growth of InGaN/(Al)GaN Quantum Well  Structures in a Multi-Wafer High Speed Rotating Disk Reactor”, MRS Internet  J. Nitride Semicond. Res.1,24(1996).  

72.     K. Li, J. Lin, A.T.S. Wee, K.L. Tan, Z.C. Feng & J.B.  Webb, “Surface and interface analysis of GaSb/GaAs heterostructures grown by  metalorganic magnetron sputtering”, Appl. Surf. Sci. 99, 59-66 (1996). {cited: 7}  

71.     H.Y. Chen, J. Lin,  K.L. Tan & Z.C. Feng,  “Characterization of lead lanthanum titanate thin films grown on fused quartz  using MOCVD”, Thin Solid Films, 289, 59-64 (1996). {cited:  38}                                                  

70.     C. Carter-Coman, A.S. Brown, N.M. Jokerst, D.E. Dawson, R.  Bicknell-Tassius, Z.C. Feng, K.C. Rajkumar & G. Dangall, “Strain  accommodation in mismatched layers by molecular beam epitaxy: introduction of  a new compliant substrate technology”, J. Electronic Materials 25,  1044-1048 (1996).{cited: 30}  

69.     W. Shan, B.D. Little, J.J. Song, Z.C. Feng, M. Schurman  & R.A. Stall, “Optical transitions in InxGa1-xN  alloys grown by metalorganic chemical vapor deposition”, Appl. Phys. Lett. 69,  3315-17 (1996). {cited: 116}        

68.     H.Y. Zhang, X.H. He, Y.H. Shih, M. Schurman, Z.C. Feng  & R.A. Stall, “The study of nonlinear optical effects in GaN:Mg epitaxial  film”, Appl. Phys. Lett. 69, 2953 (1996). {cited: 66}  

67.     H.Y. Zhang, X.H. He, Y.H. Shih, M. Schurman, Z.C. Feng  & R.A. Stall, “The wavequide study and the refractive indices of GaN:Mg  epitaxial film”, Optical Lett. 21, 1529-1531 (1996). {cited: 21}  

66.     D.H. Lee, B. Park, Z.C. Feng, D.B. Poker, L. Riester  & J.E.E. Baglin, “Surface hardness enhancement in ion-implanted amorphous  carbon”, J. Appl. Phys. 80, 1480-84 (1996). {cited: 20}  

65.     Z.C. Feng, A. Rohatgi, C.C. Tin, R.  Hu, A.T.S. Wee & K.P. Se, “Structural, optical and surface science  studies of 4H-SiC epilayers grown by low pressure chemical vapor deposition”,  J. Electronic Materials 25, 917-923 (1996). {cited: 16}  

64.     C.C. Tin, R. Hu, J. Liu, Y. Vohra & Z.C. Feng,  "Raman microprobe spectroscopy of low-pressure-grown 4H-SiC  epilayers", J. Crystal Growth 158, 509-513 (1996). {cited: 8}  

63.     Z.C. Feng, H.C. Chou, A. Rohatgi, G.K.  Lim, A.T.S. Wee & K.L. Tan, "Correlations between the MOCVD-grown  CdTe/CdS/SnO2/glass solar cell efficiencies and the interface/surface  properties", J. Appl. Phys.79, 2151-53(1996). {cited: 77}  

62.     Z.C. Feng, H. Gong, W.J. Choyke, N.J.  Doyle, R.F.C. Farrow, "A multi-technique study of the surface  preparation of InSb substrate and subsequent grown CdTe films by molecular  beam epitaxy", J. Materials Science: Materials in Electronics 7,  23-26 (1996). {cited: 5}  

1995: (8)

61.     Z.C. Feng, S. Perkowitz, J. Cen, K.K.  Bajaj, D.K. Kinell & R.L. Whitney, "Photoluminescence, Raman and  infrared diagnostics of GaAs-AlGaAs superlattices for intersubband infrared  detection", IEEE J. Selected Topics in Quantum Electronics 1,  1119-1125 (1995). {cited: 1}  

60.     Z.C. Feng, C.C. Tin, R. Hu, & J.  Williams,, "Raman and Rutherford backscattering analyses of cubic SiC  thin films grown on Si by vertical chemical vapor deposition", Thin  Solid Films 266, 1-7 (1995).  {cited: 38}  

59.     Z.C. Feng, S.J. Chua, A. Raman &  K.P.J. William, "Growth and investigation of quaternary III-III-III-V  InGaAlAs layers on InP by molecular beam epitaxy", J. Chinese Institute  of Electrical Engineering 2, 69-73 (1995).  

58.     Z.C. Feng, F. Watt, K.K. Lee, A.T.S.  Wee, H.H. Hng, V. Arbet-Engels, R.P.G. Karunasiri, K.L. Wang & K.P.J.  William, "Interdisciplinary characterization of sandwiched SiGe thin  layers grown by molecular beam epitaxy", J. Chinese Institute of  Electrical Engineering, 2, 25-28 (1995).  

57.     Z.C. Feng, C.C. Tin, R. Hu, &  K.T. Yue, "Combined Raman and luminescence assessment of epitaxial  6H-SiC films grown on 6H-SiC by low pressure vertical chemical vapor  deposition", Semicond. Sci. & Tech. 10, 1418-1422 (1995). {cited: 3}  

56.     M.J. Bozack, J.R. Williams, J.M. Ferraro, Z.C. Feng,  & R.E. Jones, Jr., "Physical characterization of Pb1Zr0.2Ti0.8O3 prepared by the sol-gel  process", J. Electrochem. Soc. 142, 485-491 (1995). {cited: 16}  

55.     A.T.S. Wee, Z.C. Feng, H.H. Hgn, K.L. Tan, R.F.C. Farrow  & W.J. Choyke, "XPS and SIMS studies on MBE-grown CdTe/InSb(001)  heterostructures", J. Phys. C: Condensed Matter, 7, 4359-4369  (1995). {cited: 16}  

54.     H.C. Poon, Z.C. Feng, Y.P. Feng & M.F. Li, "The  relativistic band structure of ternary II-VI semiconductor alloys containing  Cd, Zn, Se and Te", J. Phys. C: Condensed Matter 7, 2783-2799  (1995). {cited: 68}                          

1994: (11)

53.     Z.C. Feng, C.C. Tin, K.T. Yue, R. Hu,  J. Williams, S.C. Liew, Y.G. Foo, S.K.L. Choo, W.E. Ng and S.H. Tang,  "Combined structural and optical assessment of CVD grown  3C-SiC/Si", Mat. Res. Soc. Symp. Proc. Vol. 339, "Diamond,  Silicon Carbide and Nitride Wide-bandgap Semiconductors", ed. by  C.H. Carter, Jr., S. Nakamura, G. Gildenblat, R.J. Nemanich, Mat. Research  Society, Pittsburgh, p.417-422 (1994).   {cited: 5}  

52.      DCB Redd, CJ Frank, ZC Feng, TS Gansler, RL  McCreery, Raman spectrosopic characterization of human malignant  tissues: implications for a percutaneous optical biopsy technique for in-situ  tissue diagnosis, Optical Biopsy 2081, 185-191 (1994).  {cited: 2}

51.     A.T.S. Wee, Z.C. Feng, H.H. Hgn, K.L. Tan, C.C. Tin, R.  Wu & R. Coston, "Surface chemical states on 3C-SiC/Si  epilayers", Appl. Surf. Science 81, 377-385 (1994). {cited: 22}  

50.      Z.C. Feng & A.T.S. Wee, "Multi-technique study of porous silicon  membranes by Raman scattering, FTIR, XPS, AES and SIMS", a review  chapter in book <<Porous Silicon>>, ed. by Z.C.Feng & R.Tsu,  World Scientific Publisher, Singapore, p.175-194 (1994). {cited: 1}

49.     Z.C. Feng, A.T.S. Wee & K.L. Tan,  "Surface and optical analysis of porous silicon membranes", J.  Phys. D: Appl. Phys. 27, 1968-1975 (1994). {cited: 20}  

48.     W. Ji, A.K. Kukaswadia, Z.C. Feng & S.H. Tang,  "Self-defocusing of nanosecond laser pulses in ZnTe", J. Appl.  Phys. 75, 3340-3343 (1994).  {cited: 11}  

47.     Z.C. Feng, P. Becla, L.S. Kim, S.  Perkowitz, Y.P. Feng, H.C. Poon, K.P. Williams & G.D. Pitt, "Raman,  infrared, photoluminescence and theoretical studies of the II-VI-VI ternary  CdSeTe", J. Crystal Growth 138, 239-243 (1994). {cited: 44}  

46.     W. Ji, A.K. Kukaswadia, Z.C. Feng, S.H. Tang & P.  Becla, "Nonlinear refraction and optical limiting in bulk ZnTe  crystal", J. Crystal Growth 138, 187-190 (1994).  {cited: 2 }  

45.     Z.C. Feng, B.S. Kwak, A. Erbil, L.A.  Boatner, "Raman scattering and X-ray diffraction of highly-textured (Pb1-xLax)TiO3  thin films", Appl. Phys. Lett. 64,2350-2352 (1994). {cited: 21  }                                                    

44.     Z.C. Feng, A.T.S. Wee, W.J. Choyke  & R.F.C. Farrow, “Indium Interdiffusion in CdTe/InSb Heterostructures  Studied by Optical and Surface Analytical Techniques”, Trans. Mat. Res. Soc.  Jpn. 19A, 175-178 (1994).  

43.     Z.C. Feng, A.T.S.Wee, S.H.Tang,  K.L.Tan, J.R.Payne, B.Pucket & R.DuVarney, “A Comprehensive Analysis of  Porous Silicon by Surface & Optical Techniques”, Trans. Mat. Res. Soc.  Jpn. 19A, 119-122 (1994).        

1993: (8)

42.     Z.C. Feng, B.S. Kwak, A. Erbil &  L.A. Boatner, "Raman spectra of MOCVD-grown ferroelectric PbTiO3  thin films", Mat. Res. Soc. Symp. Proc. Vol. 335, "Metal-Organic  Chemical Vapor Deposition of Electronic Ceramics", p.75-80  (1993).  {cited: 3}  

41. CS Patuwathavithane, JB Crofton, JR Williams, CC  Tin, ZC Feng, Oxidation Studies for 6H-SiC, Amorphous and Crystalline Silicon Carbide  IV, 163-169 (1992).   {cited:  28}

40.     D.N. Talwar, Z.C. Feng, & P. Becla,  "Impurity-induced phonon disordering in Cd1-xZnxTe ternary alloys",  Phys. Rev. B48, 17064-17069 (1993).    {cited: 37}

39.     B. Lou & Z.C. Feng, "Valence subbands and  acceptor levels in p-type GaAs-AlxGa1-xAs superlattices", Semicon. Sci.  Technol. 8, 1741-1745 (1993).  

38.     D. Redd, Z.C. Feng, K.T. Yue & T. Gansler,  "Raman spectroscopic characterization of human breast issue:  implications for breast malignancy monitoring", Applied Spectroscopy 47,  787-791 (1993). {cited: 143}  

37.     Z.C .Feng, J.R. Payne & B.C.  Covington, "Anomalous temperature behavior of Raman spectra from visible  light emitting porous Si", Solid State Commun. 87, 131-134  (1993). {cited: 2}  

36.     Z.C. Feng, S. Perkowitz, D.K. Kinnel,  R.L. Whitney & D.N. Talwar, "Compositional dependence of optical  phonon frequencies in AlxGa1-xAs", Phys. Rev. B47,  13466-13470 (1993). {cited: 41}  

35.     Z.C. Feng, B.S. Kwak, A. Erbil &  L.A. Boatner, "Difference Raman spectra of PbTiO3 thin films grown by  metalorganic chemical vapor deposition", Appl. Phys. Lett. 62,  349-351 (1993). {cited: 29}  

1992: (4)

34.     K.T. Yue, Z.C. Feng, S. Perkowitz & B. Puckett,  "A simple, versatile, liquid nitrogen cryostat for Raman studies",  Applied Spectroscopy 46, 1590-92 (1992).  {cited: 4}  

33.     M. Macler, Z.C. Feng, S. Perkowitz, R. Rousina & J.B.  Webb, "Far infrared analysis of In1-xGaxSb thin films on GaAs grown by  metalorganic magnetron sputtering", Phys. Rev. B46, 6902-6906  (1992). {cited: 12}  

32.     J.J. Dubowski, A.P. Roth. E. Deleporte, G. Peter, Z.C. Feng  & S. Perkowitz, "Optical properties of CdTe-Cd0.90Mn0.10Te quantum  well structures grown by pulsed laser evaporation and epitaxy", J.  Cryst. Growth 44, 862-866 (1992).  {cited: 17}  

31.     Z.C. Feng, A.A. Allerman, P.A. Barnes  & S. Perkowitz, "Raman scattering of InxGa1-xAs/InP grown by Uniform  Radial Flow Epitaxy", Appl. Phys. Lett. 60, 1848-1850 (1992). {cited: 36}  

1991: (4)

30.     D.N. Talwar & Z.C. Feng,  "Tight-binding  description for the bound electronic states of isolated single and paired  native defects in b-SiC", Phys. Rev. B44,  3191-3198 (1991). {cited: 49}  

29.     Z.C .Feng, S. Perkowitz, R. Rousina  & J.B. Webb, "Raman and infrared spectroscopies of In1-xGaxSb thin  films on GaAs grown by metalorganic magnetron sputtering", Can. J. Phys.  69, 386-389 (1991). {cited: 11}  

28.     Z.C .Feng, S. Perkowitz & P.  Becla, "Multiple phonon overtones in ZnTe", Solid State Commu.78,  1011-14 (1991). {cited: 20}

27.     Z.C. Feng, S. Perkowitz, & J.J.  Dubowski, "Raman scattering studies of Cd1-xMnxTe films on GaAs by  pulsed laser evaporation and epitaxy", J. Appl. Phys. 69,  7782-7787 (1991). {cited: 5}  

1990: (4)

26.     J. Hwang, K. Zhang, B.S. Kwak, A. Erbil & Z.C. Feng,  "Growth of textured diamond films on Si (100) by C2H2/O2 flame  method", J. Materials Research, 5, 2334-2336 (1990). {cited: 9}  

25.     Z.C. Feng, S. Perkowitz, T.S. Rao  & J.B. Webb, "Resonance Raman scattering from epitaxial InSb thin  films", J. Appl. Phys. 68, 5363-5365 (1990). {cited: 20}  

24.     S. Perkowitz, L.S. Kim, Z.C. Feng, P. Becla,  "Optical phonons in Cd1-xZnxTe", Phys.Rev. B42, 1455-57  (1990). {cited: 61}  

23.     Z.C. Feng, S. Perkowitz & O.K.  Wu, "Raman and resonant Raman scattering for the HgTe/CdTe  superlattice", Phys. Rev. B41, 6057-6060 (1990). {cited: 10}  

1989: (4)

22.     S. Perkowitz, Z.C. Feng, A. Erbil, R. Sudharsanan, K.T.  Pollard & A. Rohatgi, "Raman and photoluminescence analysis of  Cd1-xMnxTe thin films", in Raman Scattering, Luminescence, and  Spectroscopic Instrumentation in Technology, Proceedings of SPIE, Vol.1055,  p.76-84 (1989).       {cited: 2}  

21.     R. Sudharsanan, Z.C. Feng, S. Perkowitz, A. Erbil, K.T.  Pollard & A. Rohatgi, "Characterization of MOCVD-grown CdMnTe films  by infrared spectroscopy", J. Electronic Materials, 18, 453-455  (1989). {cited: 3}  

20.     Z.C. Feng, S. Perkowitz, R.  Sudharsanan, A. Erbil, K.T. Pollard, A. Rohatgi, J. Bradshaw & W.J.  Choyke, "Photoluminesc-ence of Cd1-xMnxTe films grown by metalorganic  chemical vapor deposition", J. Appl. Phys. 66, 1711-1716 (1989). {cited: 4}  

19.     Z.C. Feng, S.Perkowitz, J.M.Wrobel  & J.J.Dubowski, "Outgoing multi-phonon resonant Raman scattering and  luminescence near the Eo+Do gap in epitaxial  CdTe films", Phys. Rev. B39, 12997-13000 (1989).   {cited: 34}        

1988: (6)

18.     Z.C. Feng, R. Sudharsanan, S.  Perkowitz, A. Erbil, K.T. Pollard & A. Rohatgi, "Raman scattering  characterization of high-quality Cd1-xMnxTe films grown by metalorganic  chemical vapor deposition", J. Appl. Phys. 64, 6861-6863 (1988). {cited: 18}  

17.     Z.C. Feng, W.J. Choyke & J.A.  Powell, "Raman determination of layer stresses and strains for  heterostructures and its application to the cubic 3C-SiC/Si system", J.  Appl. Phys. 64, 6827-6835 (1988).   {cited: 115}    

16.     Z.C. Feng, A. Mascarenhas, W.J.  Choyke & J.A. Powell, "Raman scattering studies for chemical vapor  deposited 3C-SiC films on (100) Si", J. Appl. Phys. 64, 3176-3186  (1988). {cited:  199}                                          

15.     W.J. Choyke, Z.C. Feng & J.A. Powell, "Low  temperature photoluminescence studies of CVD grown cubic SiC on Si", J.  Appl. Phys. 64, 3163-3175 (1988).  {cited: 165}  

14.     Z.C. Feng, M.J. Bevan, W.J. Choyke  & S.V. Krishnaswamy, "A photoluminescence comparison of CdTe thin  films grown by molecular beam epitaxy, metalorganic chemical vapor & UHV  sputtered depositions", J. Appl. Phys. 64, 2595-2600 (1988). {cited:48}  

13.     Z.C. Feng, M.G. Burke, W.J. Choyke,  "Structural defect related donor-bound exciton spectra in MBE (001) CdTe  films", Appl. Phys. Lett. 53, 128-130 (1988). {cited: 33}  

1987-85: (4)

12.   M.G. Burke, W.J. Choyke, Z.C. Feng & M.H. Hanes,  "Characterization of defect structures in MBE-grown (001) CdTe films by  TEM and low-temperature photoluminescence", in Microscopy of  Semiconducting Materials - V, IOP Conf. Ser., no.87, p.147-152  (1987).

11.     WJ Choyke, MG Burke, ZC Feng, M Hanes, A Mascarenhas, Defect-related  luminescence in molecular beam epitaxy grown CdTe films,  Materials Science Forum 10, 769-774 (1986). {cited: 4}

10.     Z.C. Feng, A. Mascarenhas & W.J.  Choyke, "Low temperature photoluminescence spectra of (001) CdTe films  grown by molecular beam epitaxy at different substrate temperatures", J.  Lumin. 35, 329-341 (1986).  {cited: 89}  

9.        Z.C. Feng, A. Mascarenhas, W.J.  Choyke, R.F.C. Farrow, F.A. Shirland & W.J. Takei, "A  photoluminescence study of molecular beam epitaxy grown CdTe films on (001)  InSb substrates", Appl. Phys. Lett. 47, 24-25 (1985). {cited: 48}

1984-82: (8)

8.       Z.C. Feng, "The eigenequation of  angular momentum operator induced in spherical coordinates", University  Physics Vol. 5, No. 2, 41-43 (1984). (in Chinese)  

7.       H.D. Liu, Z.C .Feng & Z.Z. Guo, "The stresses  and photoelastic effects in GaAs-GaAlAs multilayer wafers with masked and  selective thermal oxidation structure", Acta Optica Sinica, 3,  No. 6, 542-549 (1984).  

6.       H.D. Liu & Z.C .Feng, "Polarization  characteristics of stripe geometry GaAs-Ga1-xAlxAs DH lasers with masked and  selective thermal oxidation structure", China Lasers 10, 65-69  (1983).  

5.       Z.C. Feng & H.D. Liu,  "Curvature Radius and layer stresses for thermal strain in semiconductor  multilayer structures", Chinese J. of semicond. 4, 171-180  (1983).  

4.       H.D. Liu & Z.C. Feng, "The stresses and  photoelastic effects in stripe geometry GaAs-GaAlAs DH lasers with masked and  selective thermal oxidation (MSTO) structure", IEEE J. Quantum Electron.  QE-19, 1016-1020 (1983).  {cited: 11}  

3.       Z.C. Feng & H.D. Liu,  "Generalized formula for curvature radius and layer stresses caused by  thermal strain in semiconductor multilayer structures", J. Appl. Phys. 54,  83-85 (1983). {cited: 134}  

2.       H.D. Liu, W.X. Chen & Z.C. Feng, "Studies of  native oxides of GaAs", Chinese J. of Semicond. 3, 359-365  (1982).  

1.    H.D. Liu & Z.C. Feng,  "Lloyd's mirror interference in a medium - A new method for determining  photoelastic index variation", Electron. Lett. 18, 251-252  (1982). {cited: 1}

 

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